生命周期: | Active | 包装说明: | DIP, |
Reach Compliance Code: | compliant | ECCN代码: | 3A001.A.2.C |
HTS代码: | 8542.32.00.51 | Factory Lead Time: | 18 weeks |
风险等级: | 5.62 | 最长访问时间: | 90 ns |
其他特性: | AUTOMATIC WRITE | JESD-30 代码: | R-GDIP-T28 |
JESD-609代码: | e0 | 长度: | 37.215 mm |
内存密度: | 262144 bit | 内存集成电路类型: | EEPROM |
内存宽度: | 8 | 湿度敏感等级: | 1 |
功能数量: | 1 | 端子数量: | 28 |
字数: | 32768 words | 字数代码: | 32000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 组织: | 32KX8 |
封装主体材料: | CERAMIC, GLASS-SEALED | 封装代码: | DIP |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
编程电压: | 5 V | 认证状态: | Not Qualified |
筛选级别: | MIL-STD-883 Class C | 座面最大高度: | 5.72 mm |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | MILITARY |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 15.24 mm |
最长写入周期时间 (tWC): | 3 ms | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AT28HC256F-90FM/883 | ATMEL |
获取价格 |
256 32K x 8 High Speed Parallel EEPROMs | |
AT28HC256F-90FM/883 | MICROCHIP |
获取价格 |
IC EEPROM 256KBIT 90NS 28FLATPK | |
AT28HC256F-90JC | ATMEL |
获取价格 |
256 32K x 8 High Speed Parallel EEPROMs | |
AT28HC256F-90JCT/R | ATMEL |
获取价格 |
EEPROM, 32KX8, 90ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 | |
AT28HC256F-90JI | ATMEL |
获取价格 |
256 32K x 8 High Speed Parallel EEPROMs | |
AT28HC256F-90JIT/R | ATMEL |
获取价格 |
EEPROM, 32KX8, 90ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 | |
AT28HC256F-90JJT/R | ATMEL |
获取价格 |
EEPROM, 32KX8, 90ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 | |
AT28HC256F-90JLT/R | ATMEL |
获取价格 |
EEPROM, 32KX8, 90ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 | |
AT28HC256F-90JU | MICROCHIP |
获取价格 |
IC EEPROM 256KBIT 90NS 32PLCC | |
AT28HC256F-90LJ | ATMEL |
获取价格 |
EEPROM, 32KX8, 90ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32 |