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AT28HC256F-90TU PDF预览

AT28HC256F-90TU

更新时间： 2024-11-05 15:43:27
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
24页 467K
描述
IC EEPROM 256KBIT 90NS 28TSOP

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中文翻译

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AT28HC256F-90TU 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：TSOP1, TSSOP28,.53,22
Reach Compliance Code：compliantFactory Lead Time：7 weeks
风险等级：5.72最长访问时间：90 ns
命令用户界面：NO数据轮询：YES
耐久性：10000 Write/Erase CyclesJESD-30 代码：R-PDSO-G28
JESD-609代码：e3长度：11.8 mm
内存密度：262144 bit内存集成电路类型：EEPROM
内存宽度：8湿度敏感等级：3
功能数量：1端子数量：28
字数：32768 words字数代码：32000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：32KX8
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装等效代码：TSSOP28,.53,22封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE页面大小：64 words
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：5 V编程电压：5 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大待机电流：0.0003 A子类别：EEPROMs
最大压摆率：0.08 mA最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：0.55 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
切换位：YES宽度：8 mm
最长写入周期时间 (tWC)：3 msBase Number Matches：1

AT28HC256F-90TU 数据手册

 浏览型号AT28HC256F-90TU的Datasheet PDF文件第2页浏览型号AT28HC256F-90TU的Datasheet PDF文件第3页浏览型号AT28HC256F-90TU的Datasheet PDF文件第4页浏览型号AT28HC256F-90TU的Datasheet PDF文件第5页浏览型号AT28HC256F-90TU的Datasheet PDF文件第6页浏览型号AT28HC256F-90TU的Datasheet PDF文件第7页 
Features  
• Fast Read Access Time – 70 ns  
• Automatic Page Write Operation  
– Internal Address and Data Latches for 64 Bytes  
– Internal Control Timer  
• Fast Write Cycle Times  
– Page Write Cycle Time: 3 ms or 10 ms Maximum  
– 1 to 64-byte Page Write Operation  
• Low Power Dissipation  
256K (32K x 8)  
High-speed  
Parallel  
– 80 mA Active Current  
– 3 mA Standby Current  
• Hardware and Software Data Protection  
• DATA Polling for End of Write Detection  
• High Reliability CMOS Technology  
– Endurance: 104 or 105 Cycles  
– Data Retention: 10 Years  
EEPROM  
• Single 5V 10% Supply  
• CMOS and TTL Compatible Inputs and Outputs  
• JEDEC Approved Byte-wide Pinout  
• Full Military and Industrial Temperature Ranges  
• Green (Pb/Halide-free) Packaging Option  
AT28HC256  
1. Description  
The AT28HC256 is a high-performance electrically erasable and programmable read-  
only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-  
tured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256 offers  
access times to 70 ns with power dissipation of just 440 mW. When the AT28HC256  
is deselected, the standby current is less than 5 mA.  
The AT28HC256 is accessed like a Static RAM for the read or write cycle without the  
need for external components. The device contains a 64-byte page register to allow  
writing of up to 64 bytes simultaneously. During a write cycle, the address and 1 to 64  
bytes of data are internally latched, freeing the addresses and data bus for other oper-  
ations. Following the initiation of a write cycle, the device will automatically write the  
latched data using an internal control timer. The end of a write cycle can be detected  
by DATA Polling of I/O7. Once the end of a write cycle has been detected a new  
access for a read or write can begin.  
Atmel’s 28HC256 has additional features to ensure high quality and manufacturability.  
The device utilizes internal error correction for extended endurance and improved  
data retention characteristics. An optional software data protection mechanism is  
available to guard against inadvertent writes. The device also includes an extra  
64 bytes of EEPROM for device identification or tracking.  
0007N–PEEPR–9/09  
1234567...24

中文翻译

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AT28HC256F-90TU 替代型号

型号 品牌 替代类型 描述 数据表
AT28HC256-90SU MICROCHIP

类似代替

 IC EEPROM 256KBIT 90NS 28SOIC

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AT28HC256F-90UC ATMEL

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 		EEPROM, 32KX8, 90ns, Parallel, CMOS, CPGA28, CERAMIC, PGA-28
AT28HC256F-90UI ATMEL

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 		EEPROM, 32KX8, 90ns, Parallel, CMOS, CPGA28, CERAMIC, PGA-28
AT28HC256F-90UM ATMEL

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 		EEPROM, 32KX8, 90ns, Parallel, CMOS, CPGA28, CERAMIC, PGA-28
AT28HC256F-90UM/883 ATMEL

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 		256 32K x 8 High Speed Parallel EEPROMs
AT28HC256L-12DC ETC

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 		x8 EEPROM
AT28HC256L-12DI ATMEL

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 		EEPROM, 32KX8, 120ns, Parallel, CMOS, CDIP28, 0.600 INCH, CERDIP-28
AT28HC256L-12DM/883 ETC

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 		x8 EEPROM
AT28HC256L-12FM/883 ATMEL

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 		EEPROM, 32KX8, 120ns, Parallel, CMOS, CDFP28, BOTTOM BRAZED, CERAMIC, FP-28
AT28HC256L-12JC ATMEL

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 		EEPROM, 32KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28HC256L-12JCT/R ATMEL

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 		EEPROM, 32KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32

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