Datasheet > ASI-L67201V-65

ASI-L67201V-65

更新时间： 2024-11-16 04:01:51

品牌	Logo	应用领域
TEMIC		先进先出芯片
页数	文件大小	规格书
16页	146K
描述
FIFO, 512X9, 65ns, Asynchronous, CMOS, PQCC32, PLASTIC, LCC-32

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ASI-L67201V-65 数据手册

MATRA MHS

L 67201/L 67202

512 × 9 & 1K × 9 / 3.3 Volts CMOS Parallel FIFO

Introduction

The L67201/202 implement a first-in first-out algorithm, Using an array of eight transistors (8 T) memory cell and

featuring asynchronous read/write operations. The FULL fabricated with the state of the art 1.0 µm lithography

and EMPTY flags prevent data overflow and underflow. named SCMOS, the L 67201/202 combine an extremely

The Expansion logic allows unlimited expansion in word low standby supply current (typ = 1.0 µA) with a fast

size and depth with no timing penalties. Twin address access time at 55 ns over the full temperature range. All

pointers automatically generate internal read and write versions offer battery backup data retention capability

addresses, and no external address information are with a typical power consumption at less than 5 µW.

required for the MHS FIFOs. Address pointers are

For military/space applications that demand superior

automatically incremented with the write pin and read

levels of performance and reliability the L 67201/202 is

pin. The 9 bits wide data are used in data communications

processed according to the methods of the latest revision

applications where a parity bit for error checking is

of the MIL STD 883 (class B or S) and/or ESA SCC 9000.

necessary. The Retransmit pin reset the Read pointer to

zero without affecting the write pointer. This is very

useful for retransmitting data when an error is detected in

the system.

Features

D First-in first-out dual port memory

D Single supply 3.3 ± 0.3 volts

D 512 × 9 organisation (L 67201)

D 1024 × 9 organisation (L 67202)

D Fast access time

D Fully expandable by word width or depth

D Asynchronous read/write operations

D Empty, full and half flags in single device mode

D Retransmit capability

D Bi-directional applications

55, 60, 65 ns, commercial, industrial military and

automotive

D Battery back-up operation 2 V data retention

D TTL compatible

D Wide temperature range :

D High performance SCMOS technology

– 55 °C to + 125 °C

D 67201L/202L low power

67201V/202V very low power

Rev. C (10/11/95)

12 3 4 5 6 7...16

中文翻译

下载PDF

与ASI-L67201V-65相关器件

型号	品牌	获取价格	描述	数据表
ASI-L67202L-55	TEMIC	获取价格	FIFO, 1KX9, 55ns, Asynchronous, CMOS, PQCC32, PLASTIC, LCC-32
ASI-L67202L-60	TEMIC	获取价格	FIFO, 1KX9, 60ns, Asynchronous, CMOS, PQCC32, PLASTIC, LCC-32
ASI-L67202L-65	TEMIC	获取价格	FIFO, 1KX9, 65ns, Asynchronous, CMOS, PQCC32, PLASTIC, LCC-32
ASI-L67202V-55	TEMIC	获取价格	FIFO, 1KX9, 55ns, Asynchronous, CMOS, PQCC32, PLASTIC, LCC-32
ASI-L67202V-60	TEMIC	获取价格	FIFO, 1KX9, 60ns, Asynchronous, CMOS, PQCC32, PLASTIC, LCC-32
ASI-L67202V-65	TEMIC	获取价格	FIFO, 1KX9, 65ns, Asynchronous, CMOS, PQCC32, PLASTIC, LCC-32
ASI-MA40232-119	ASI	获取价格	SILICON DETECTOR DIODE
ASIMM8006	ASI	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
ASIMRAL1720-9	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
ASIMRAL2023-6	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR