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AS7C33256PFD36A-166TQI PDF预览

AS7C33256PFD36A-166TQI

更新时间: 2024-10-28 20:20:15
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
20页 527K
描述
Standard SRAM, 256KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

AS7C33256PFD36A-166TQI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.37
最长访问时间:3.5 ns其他特性:FLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 代码:R-PQFP-G100JESD-609代码:e0
长度:20 mm内存密度:9437184 bit
内存集成电路类型:STANDARD SRAM内存宽度:36
功能数量:1端子数量:100
字数:262144 words字数代码:256000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX36
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.6 mm
最大供电电压 (Vsup):3.465 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:14 mm
Base Number Matches:1

AS7C33256PFD36A-166TQI 数据手册

 浏览型号AS7C33256PFD36A-166TQI的Datasheet PDF文件第1页浏览型号AS7C33256PFD36A-166TQI的Datasheet PDF文件第3页浏览型号AS7C33256PFD36A-166TQI的Datasheet PDF文件第4页浏览型号AS7C33256PFD36A-166TQI的Datasheet PDF文件第5页浏览型号AS7C33256PFD36A-166TQI的Datasheet PDF文件第6页浏览型号AS7C33256PFD36A-166TQI的Datasheet PDF文件第7页 
AS7C33256PFD32A  
AS7C33256PFD36A  
®
1,2  
8 Mb Synchronous SRAM products list  
Org  
Part Number  
Mode  
PL-SCD  
PL-SCD  
PL-SCD  
PL-DCD  
PL-DCD  
PL-DCD  
FT  
Speed  
512KX18  
256KX32  
256KX36  
512KX18  
256KX32  
256KX36  
512KX18  
256KX32  
256KX36  
512KX18  
256KX32  
256KX36  
512KX18  
256KX32  
256KX36  
AS7C33512PFS18A  
AS7C33256PFS32A  
AS7C33256PFS36A  
AS7C33512PFD18A  
AS7C33256PFD32A  
AS7C33256PFD36A  
AS7C33512FT18A  
AS7C33256FT32A  
AS7C33256FT36A  
AS7C33512NTD18A  
AS7C33256NTD32A  
AS7C33256NTD36A  
AS7C33512NTF18A  
AS7C33256NTF32A  
AS7C33256NTF36A  
166/133 MHz  
166/133 MHz  
166/133 MHz  
166/133 MHz  
166/133 MHz  
166/133 MHz  
7.5/8.5/10 ns  
7.5/8.5/10 ns  
7.5/8.5/10 ns  
166/133 MHz  
166/133 MHz  
166/133 MHz  
7.5/8.5/10 ns  
7.5/8.5/10 ns  
7.5/8.5/10 ns  
FT  
FT  
NTD-PL  
NTD-PL  
NTD-PL  
NTD-FT  
NTD-FT  
NTD-FT  
1 Core Power Supply: VDD = 3.3V + 0.165V  
2 I/O Supply Voltage: VDDQ = 3.3V + 0.165V for 3.3V I/O  
VDDQ = 2.5V + 0.125V for 2.5V I/O  
PL-SCD  
PL-DCD  
FT  
:
:
:
Pipelined Burst Synchronous SRAM - Single Cycle Deselect  
Pipelined Burst Synchronous SRAM - Double Cycle Deselect  
Flow-through Burst Synchronous SRAM  
1
TM  
NTD -PL  
:
:
Pipelined Burst Synchronous SRAM with NTD  
TM  
NTD-FT  
Flow-through Burst Synchronous SRAM with NTD  
1NTD: No Turnaround Delay. NTDTM is a trademark of Alliance Semiconductor Corporation. All trademarks mentioned in this document are the property of  
their respective owners.  
12/1/04, v.1.2  
Alliance Semiconductor  
P. 2 of 20  

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