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AS7C33256PFD36A-133TQIN PDF预览

AS7C33256PFD36A-133TQIN

更新时间: 2024-01-30 09:15:23
品牌 Logo 应用领域
ALSC 内存集成电路静态存储器
页数 文件大小 规格书
20页 527K
描述
3.3V 256K x 32/36 pipelined burst synchronous SRAM

AS7C33256PFD36A-133TQIN 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:QFP包装说明:LQFP, QFP100,.63X.87
针数:100Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.49最长访问时间:4 ns
其他特性:FLOW-THROUGH OR PIPELINED ARCHITECTUREI/O 类型:COMMON
JESD-30 代码:R-PQFP-G100JESD-609代码:e3
长度:20 mm内存密度:9437184 bit
内存集成电路类型:STANDARD SRAM内存宽度:36
功能数量:1端子数量:100
字数:262144 words字数代码:256000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX36
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装等效代码:QFP100,.63X.87
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):245
电源:2.5/3.3,3.3 V认证状态:Not Qualified
座面最大高度:1.6 mm最大待机电流:0.03 A
最小待机电流:3.14 V子类别:SRAMs
最大压摆率:0.425 mA最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:14 mm

AS7C33256PFD36A-133TQIN 数据手册

 浏览型号AS7C33256PFD36A-133TQIN的Datasheet PDF文件第3页浏览型号AS7C33256PFD36A-133TQIN的Datasheet PDF文件第4页浏览型号AS7C33256PFD36A-133TQIN的Datasheet PDF文件第5页浏览型号AS7C33256PFD36A-133TQIN的Datasheet PDF文件第7页浏览型号AS7C33256PFD36A-133TQIN的Datasheet PDF文件第8页浏览型号AS7C33256PFD36A-133TQIN的Datasheet PDF文件第9页 
AS7C33256PFD32A  
AS7C33256PFD36A  
®
Write enable truth table (per byte)  
Function  
GWE BWE  
BWa  
X
BWb  
X
BWc  
BWd  
X
L
H
H
H
H
H
X
L
L
L
H
L
X
L
Write All Bytes  
L
L
L
Write Byte a  
L
H
H
L
H
Write Byte c and d  
H
H
L
X
X
X
H
X
Read  
H
H
H
Key: X = don’t care, L = low, H = high, n = a, b, c, d; BWE, BWn = internal write signal.  
Asynchronous Truth Table  
Operation  
Snooze mode  
ZZ  
H
L
OE  
X
I/O Status  
High-Z  
L
Dout  
Read  
L
H
High-Z  
Write  
L
X
Din, High-Z  
High-Z  
Deselected  
L
X
Burst order table  
Interleaved Burst Order (LBO=1)  
A1 A0 A1 A0 A1 A0 A1 A0  
Linear Burst Order (LBO=0)  
A1 A0 A1 A0 A1 A0 A1 A0  
Starting Address  
First increment  
0 0  
0 1  
1 0  
1 1  
0 1  
0 0  
1 1  
1 0  
1 0  
1 1  
0 0  
0 1  
1 1  
1 0  
0 1  
0 0  
Starting Address  
First increment  
0 0  
0 1  
1 0  
1 1  
0 1  
1 0  
1 1  
0 0  
1 0  
1 1  
0 0  
0 1  
1 1  
0 0  
0 1  
1 0  
Second increment  
Third increment  
Second increment  
Third increment  
12/1/04, v.1.2  
Alliance Semiconductor  
P. 6 of 20  

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