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AS7C331MPFS18A-200TQC PDF预览

AS7C331MPFS18A-200TQC

更新时间: 2024-11-03 14:29:23
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
21页 411K
描述
Standard SRAM, 1MX18, 7.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

AS7C331MPFS18A-200TQC 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.63
最长访问时间:7.5 ns其他特性:FLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 代码:R-PQFP-G100JESD-609代码:e0
长度:20 mm内存密度:18874368 bit
内存集成电路类型:STANDARD SRAM内存宽度:18
功能数量:1端子数量:100
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX18
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.6 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:14 mm
Base Number Matches:1

AS7C331MPFS18A-200TQC 数据手册

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May 2003  
Advance Information  
AS7C331MPFS18A  
®
1M x 18 pipelined burst synchronous SRAM  
Features  
• Organization: 1,048,576 x18 bits  
Available 100-pin TQFP and 165-ball BGA packages  
Byte write enables  
• Multiple chip enables for easy expansion  
• 3.3 V core power supply  
• 2.5 V or 3.3V I/ O operation with separate VDDQ  
• NTD™ pipelined architecture available (AS7C331MNTD18A,  
AS7C33512NTD32A/ AS7C33512NTD36A)  
Fast clock speeds to 200MHz in LVTTL/ LVCMOS  
Fast clock to data access: 3/ 3.4/ 3.8 ns  
Fast OEaccess time: 3/ 3.4/ 3.8 ns  
Fully synchronous register-to-register operation  
Single register flow-through mode  
Single-cycle deselect  
Asynchronous output enable control  
Logic block diagram  
LBO  
CLK  
ADV  
CLK  
CS  
CLR  
ADSC  
ADSP  
Burst logic  
20 18  
1M 18  
Memory  
array  
20  
20  
AddresQs  
register  
D
A[19:0]  
CS  
CLK  
18  
18  
2
GWE  
D
Q
DQb  
BW  
b
Byte Write  
registers  
BWE  
CLK  
D
Q
DQa  
BW  
Byte Write  
CLK  
a
registers  
CE0  
CE1  
CE2  
OE  
DEnableQ  
register  
Input  
Output  
registers  
registers  
CE  
CLK  
CLK  
CLK  
DEnableQ  
Power  
down  
delay  
ZZ  
register  
CLK  
OE  
18  
DQ[a,b]  
FT  
Selection guide  
-200  
5
-166  
-133  
7.5  
Units  
ns  
Minimum cycle time  
6
Maximum clock frequency  
200  
3.0  
370  
130  
70  
166  
3.4  
340  
120  
70  
133  
3.8  
MHz  
ns  
Maximum pipelined clock access time  
Maximum operating current  
Maximum standby current  
320  
110  
70  
mA  
mA  
mA  
Maximum CMOS standby current (DC)  
5/ 28/ 03, v. 052003 Advance Info  
Alliance Semiconductor  
1 of 21  
Copyright © Alliance Semiconductor. All rights reserved.  

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