Datasheet > 存储 > SRAM> AS7C251MNTD32A-200TQCN

AS7C251MNTD32A-200TQCN

更新时间： 2024-01-01 17:55:08

品牌	Logo	应用领域
ALSC		存储内存集成电路静态存储器时钟
页数	文件大小	规格书
18页	436K
描述
2.5V 1M x 32/36 Pipelined SRAM with NTD

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

AS7C251MNTD32A-200TQCN 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	QFP
包装说明：	LQFP,	针数：	100
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.38
Is Samacsys：	N	最长访问时间：	3.2 ns
其他特性：	PIPELINED ARCHITECTURE	JESD-30 代码：	R-PQFP-G100
JESD-609代码：	e3	长度：	20 mm
内存密度：	33554432 bit	内存集成电路类型：	ZBT SRAM
内存宽度：	32	功能数量：	1
端子数量：	100	字数：	1048576 words
字数代码：	1000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	1MX32	封装主体材料：	PLASTIC/EPOXY
封装代码：	LQFP	封装形状：	RECTANGULAR
封装形式：	FLATPACK, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	245	认证状态：	Not Qualified
座面最大高度：	1.6 mm	最大供电电压 (Vsup)：	2.625 V
最小供电电压 (Vsup)：	2.375 V	标称供电电压 (Vsup)：	2.5 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	MATTE TIN
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	QUAD	处于峰值回流温度下的最长时间：	30
宽度：	14 mm	Base Number Matches：	1

AS7C251MNTD32A-200TQCN 数据手册

浏览型号AS7C251MNTD32A-200TQCN的Datasheet PDF文件第2页

浏览型号AS7C251MNTD32A-200TQCN的Datasheet PDF文件第3页

浏览型号AS7C251MNTD32A-200TQCN的Datasheet PDF文件第4页

浏览型号AS7C251MNTD32A-200TQCN的Datasheet PDF文件第6页

浏览型号AS7C251MNTD32A-200TQCN的Datasheet PDF文件第7页

AS7C251MNTD32A

AS7C251MNTD36A

Signal descriptions

Signal

CLK

I/O Properties Description

CLOCK Clock. All inputs except OE, LBO, and ZZ are synchronous to this clock.

CEN

SYNC

Clock enable. When de-asserted high, the clock input signal is masked.

Address. Sampled when all chip enables are active and ADV/LD is asserted.

Data. Driven as output when the chip is enabled and OE is active.

A, A0, A1

DQ[a,b,c,d] I/O

CE0, CE1,

CE2

Synchronous chip enables. Sampled at the rising edge of CLK, when ADV/LD is asserted.

Are ignored when ADV/LD is high.

SYNC

Advance or Load. When sampled high, the internal burst address counter will increment in

the order defined by the LBO input value. When low, a new address is loaded.

ADV/LD

R/W

A high during LOAD initiates a READ operation. A low during LOAD initiates a WRITE

operation. Is ignored when ADV/LD is high.

Byte write enables. Used to control write on individual bytes. Sampled along with WRITE

command and BURST WRITE.

BW[a,b,c,d]

ASYNC Asynchronous output enable. I/O pins are not driven when OE is inactive.

Selects Burst mode. When tied to V_DDor left floating, device follows interleaved Burst order. When

STATIC

LBO

driven Low, device follows linear Burst order. This signal is internally pulled High.

ASYNC Snooze. Places device in low power mode; data is retained. Connect to GND if unused.

No connect

Snooze Mode

SNOOZE MODE is a low current, power-down mode in which the device is deselected and current is reduced to I_SB2. The duration of

SNOOZE MODE is dictated by the length of time the ZZ is in a High state.

The ZZ pin is an asynchronous, active high input that causes the device to enter SNOOZE MODE.

When the ZZ pin becomes a logic High, I_SB2is guaranteed after the time t_ZZIis met. After entering SNOOZE MODE, all inputs except ZZ

is disabled and all outputs go to High-Z. Any operation pending when entering SNOOZE MODE is not guaranteed to successfully complete.

Therefore, SNOOZE MODE (READ or WRITE) must not be initiated until valid pending operations are completed. Similarly, when exiting

SNOOZE MODE during t_PUS, only a DESELECT or READ cycle should be given while the SRAM is transitioning out of SNOOZE

MODE.

1/17/05, V 1.2

Alliance Semiconductor

P. 5 of 18

1 2 3 456 7 8...18

下载PDF

与AS7C251MNTD32A-200TQCN相关器件

型号	品牌	描述	获取价格	数据表
AS7C251MNTD32A-200TQI	ALSC	2.5V 1M x 32/36 Pipelined SRAM with NTD	获取价格
AS7C251MNTD32A-200TQI	ISSI	ZBT SRAM, 1MX32, 3.2ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100	获取价格
AS7C251MNTD32A-200TQIN	ALSC	2.5V 1M x 32/36 Pipelined SRAM with NTD	获取价格
AS7C251MNTD32A-200TQIN	ISSI	ZBT SRAM, 1MX32, 3.2ns, CMOS, PQFP100, 14 X 20 MM, LEAD-FREE, TQFP-100	获取价格
AS7C251MNTD36A-133BC	ALSC	ZBT SRAM, 1MX36, 10ns, CMOS, PBGA165, BGA-165	获取价格
AS7C251MNTD36A-133BCN	ALSC	ZBT SRAM, 1MX36, 10ns, CMOS, PBGA165, LEAD-FREE, BGA-165	获取价格

与AS7C251MNTD32A-200TQCN相关文章

MAX7219驱动8段数码管详解及数据手册关键信息
2024-05-29

5
ATMEGA328P技术资料深入分析
2024-05-29

3
AT24C02芯片手册管脚信息、参数分析、应用领域详解
2024-05-29

4
AT24C256芯片手册参数分析、引脚说明、读写程序示例
2024-05-28

6

产品中心

服务支持

精选活动

关于我们

帮助中心

AS7C251MNTD32A-200TQCN

AS7C251MNTD32A-200TQCN 技术参数

AS7C251MNTD32A-200TQCN 数据手册

与AS7C251MNTD32A-200TQCN相关器件

与AS7C251MNTD32A-200TQCN相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AS7C251MNTD32A-200TQCN

AS7C251MNTD32A-200TQCN 技术参数

AS7C251MNTD32A-200TQCN 数据手册

与AS7C251MNTD32A-200TQCN相关器件

与AS7C251MNTD32A-200TQCN相关文章

您还可以找

您在本页遇到什么问题？