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AS58C1001DCJ-25/IT

更新时间： 2024-12-01 06:37:51
品牌 Logo 应用领域
AUSTIN 存储可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
21页 335K
描述
128K x 8 EEPROM EEPROM Memory

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AS58C1001DCJ-25/IT 数据手册

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EEPROM  
AS58C1001  
Austin Semiconductor, Inc.  
128K x 8 EEPROM  
EEPROM Memory  
PIN ASSIGNMENT  
(Top View)  
32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ),  
32-Pin SOP (DG)  
AVAILABLE AS MILITARY  
SPECIFICATIONS  
z SMD 5962-38267  
z MIL-STD-883  
1
2
3
4
5
6
RDY/BUSY\  
A16  
A14  
A12  
A7  
32 Vcc  
31 A15  
30 RES\  
29 WE\  
28 A13  
27 A8  
A6  
FEATURES  
z High speed: 150, 200, and 250ns  
z Data Retention: 10 Years  
z Low power dissipation, active current (20mW/MHz (TYP)),  
standby current (100μW(MAX))  
z Single +5V (+10%) power supply  
z Data Polling and Ready/Busy Signals  
z Erase/Write Endurance (10,000 cycles in a page mode)  
z Software Data protection Algorithm  
z Data Protection Circuitry during power on/off  
z Hardware Data Protection with RES pin  
z Automatic Programming:  
7
A5  
26 A9  
8
9
A4  
A3  
A2  
A1  
25 A11  
24 OE\  
23 A10  
22 CE\  
21 I/O 7  
20 I/O 6  
19 I/O 5  
18 I/O 4  
17 I/O 3  
10  
11  
12  
13  
14  
15  
16  
A0  
I/O 0  
I/O 1  
I/O 2  
Vss  
Automatic Page Write: 10ms (MAX)  
128 Byte page size  
GENERAL DESCRIPTION  
OPTIONS  
MARKINGS  
The Austin Semiconductor, Inc. AS58C1001 is a 1 Megabit CMOS  
Electrically Erasable Programmable Read Only Memory (EEPROM)  
organized as 131, 072 x 8 bits. The AS58C1001 is capable or in  
system electrical Byte and Page reprogrammability.  
z Timing  
150ns access  
200ns access  
250ns access  
-15  
-20  
-25  
The AS58C1001 achieves high speed access, low power  
consumption, and a high level of reliability by employing advanced  
MNOS memory technology and CMOS process and circuitry  
technology and CMOS process and circuitry technology.  
This device has a 128-Byte Page Programming function to make its  
erase and write operations faster. The AS58C1001 features Data  
Polling and a Ready/Busy signal to indicate completion of erase and  
programming operations.  
This EEPROM provides several levels of data protection.  
Hardware data protection is provided with the RES pin, in addition to  
noise protection on the WE signal and write inhibit during power on  
and off. Software data protection is implemented using JEDEC  
Optional Standard algorithm.  
z Packages  
Ceramic Flat Pack  
Radiation Shielded Ceramic FP* SF  
Ceramic SOJ  
Plastic SOP  
z Operating Temperature Ranges  
-Military (-55oC to +125oC)  
-Industrial (-40oC to +85oC)  
F
No. 306  
No. 305  
DCJ No. 508  
DG  
XT  
IT  
*NOTE: Package lid is connected to ground (Vss).  
The AS58C1001 is designed for high reliability in the most  
demanding applications. Data retention is specified for 10 years and  
erase/write endurance is guaranteed to a minimum of 10,000 cycles in  
the Page Mode.  
For more products and information  
please visit our web site at  
www.austinsemiconductor.com  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS58C1001  
Rev. 5.5 12/08  
1
1234567...21

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AS58C1001DG-15/IT AUSTIN

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AS58C1001DG-15/XT AUSTIN

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AS58C1001DG-15/XT MICROSS

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