Datasheet > AS58C1001DG-25/IT

AS58C1001DG-25/IT

更新时间： 2024-12-01 06:37:51

品牌	Logo	应用领域
AUSTIN		存储可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
21页	335K
描述
128K x 8 EEPROM EEPROM Memory

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EEPROM

AS58C1001

Austin Semiconductor, Inc.

128K x 8 EEPROM

EEPROM Memory

PIN ASSIGNMENT

(Top View)

32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ),

32-Pin SOP (DG)

AVAILABLE AS MILITARY

SPECIFICATIONS

z SMD 5962-38267

z MIL-STD-883

RDY/BUSY\

A16

A14

A12

32 Vcc

31 A15

30 RES\

29 WE\

28 A13

27 A8

FEATURES

z High speed: 150, 200, and 250ns

z Data Retention: 10 Years

z Low power dissipation, active current (20mW/MHz (TYP)),

standby current (100μW(MAX))

z Single +5V (+10%) power supply

z Data Polling and Ready/Busy Signals

z Erase/Write Endurance (10,000 cycles in a page mode)

z Software Data protection Algorithm

z Data Protection Circuitry during power on/off

z Hardware Data Protection with RES pin

z Automatic Programming:

26 A9

25 A11

24 OE\

23 A10

22 CE\

21 I/O 7

20 I/O 6

19 I/O 5

18 I/O 4

17 I/O 3

I/O 0

I/O 1

I/O 2

Vss

Automatic Page Write: 10ms (MAX)

128 Byte page size

GENERAL DESCRIPTION

OPTIONS

MARKINGS

The Austin Semiconductor, Inc. AS58C1001 is a 1 Megabit CMOS

Electrically Erasable Programmable Read Only Memory (EEPROM)

organized as 131, 072 x 8 bits. The AS58C1001 is capable or in

system electrical Byte and Page reprogrammability.

z Timing

150ns access

200ns access

250ns access

-15

-20

-25

The AS58C1001 achieves high speed access, low power

consumption, and a high level of reliability by employing advanced

MNOS memory technology and CMOS process and circuitry

technology and CMOS process and circuitry technology.

This device has a 128-Byte Page Programming function to make its

erase and write operations faster. The AS58C1001 features Data

Polling and a Ready/Busy signal to indicate completion of erase and

programming operations.

This EEPROM provides several levels of data protection.

Hardware data protection is provided with the RES pin, in addition to

noise protection on the WE signal and write inhibit during power on

and off. Software data protection is implemented using JEDEC

Optional Standard algorithm.

z Packages

Ceramic Flat Pack

Radiation Shielded Ceramic FP* SF

Ceramic SOJ

Plastic SOP

z Operating Temperature Ranges

-Military (-55^oC to +125^oC)

-Industrial (-40^oC to +85^oC)

No. 306

No. 305

DCJ No. 508

*NOTE: Package lid is connected to ground (Vss).

The AS58C1001 is designed for high reliability in the most

demanding applications. Data retention is specified for 10 years and

erase/write endurance is guaranteed to a minimum of 10,000 cycles in

the Page Mode.

For more products and information

please visit our web site at

www.austinsemiconductor.com

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS58C1001

Rev. 5.5 12/08

12 3 4 5 6 7...21

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与AS58C1001DG-25/IT相关器件

型号	品牌	获取价格	描述	数据表
AS58C1001DG-25/XT	AUSTIN	获取价格	128K x 8 EEPROM EEPROM Memory
AS58C1001DG-25/XT	MICROSS	获取价格	EEPROM, 128KX8, 250ns, Parallel, CMOS, PDSO32, PLASTIC, SOP-32
AS58C1001ECA-15/883C	AUSTIN	获取价格	128K x 8 EEPROM EEPROM Memory
AS58C1001ECA-15/883C	MICROSS	获取价格	EEPROM, 128KX8, 150ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32
AS58C1001ECA-15/IT	AUSTIN	获取价格	128K x 8 EEPROM EEPROM Memory
AS58C1001ECA-15/XT	AUSTIN	获取价格	128K x 8 EEPROM EEPROM Memory
AS58C1001ECA-20/883C	MICROSS	获取价格	EEPROM, 128KX8, 200ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32
AS58C1001ECA-20/883C	AUSTIN	获取价格	128K x 8 EEPROM EEPROM Memory
AS58C1001ECA-20/IT	AUSTIN	获取价格	128K x 8 EEPROM EEPROM Memory
AS58C1001ECA-20/XT	AUSTIN	获取价格	128K x 8 EEPROM EEPROM Memory

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