Datasheet > 晶体管 > IGBT> APTGT150DU170G

APTGT150DU170G

更新时间： 2024-11-20 04:49:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		双极性晶体管
页数	文件大小	规格书
5页	246K
描述
Dual common source Trench + Field Stop IGBT Power Module

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中文翻译

获取价格

数据手册

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APTGT150DU170G 数据手册

APTGT150DU170G

Dual common source

Trench + Field Stop IGBT^®

Power Module

V_CES= 1700V

I_C= 150A @ Tc = 80°C

Application

•

AC Switches

Switched Mode Power Supplies

Uninterruptible Power Supplies

Features

•

Trench + Field Stop IGBT^®Technology

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

Avalanche energy rated

RBSOA and SCSOA rated

•

Kelvin emitter for easy drive

Very low stray inductance

Symmetrical design

M5 power connectors

•

High level of integration

Benefits

•

Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive TC of VCEsat

Low profile

RoHS Compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings

1700

Unit

V_CES

Collector - Emitter Breakdown Voltage

T_C= 25°C

250

150

300

±20

890

I_C

Continuous Collector Current

T_C= 80°C

T_C= 25°C

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_C= 25°C

RBSOA Reverse Bias Safe Operating Area

T_j= 125°C 300A @ 1600V

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

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