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APTGT150H120 PDF预览

APTGT150H120

更新时间: 2024-11-20 08:33:39
品牌 Logo 应用领域
ADPOW 双极性晶体管
页数 文件大小 规格书
5页 274K
描述
Full - Bridge Fast Trench + Field Stop IGBT Power Module

APTGT150H120 数据手册

 浏览型号APTGT150H120的Datasheet PDF文件第2页浏览型号APTGT150H120的Datasheet PDF文件第3页浏览型号APTGT150H120的Datasheet PDF文件第4页浏览型号APTGT150H120的Datasheet PDF文件第5页 
APTGT150H120  
Full - Bridge  
Fast Trench + Field Stop IGBT®  
Power Module  
VCES = 1200V  
IC = 150A @ Tc = 80°C  
Application  
VBUS  
Welding converters  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
Q1  
Q3  
G1  
E1  
G3  
E3  
OUT1 OUT2  
Features  
Fast Trench + Field Stop IGBT® Technology  
-
-
-
-
-
-
-
-
Low voltage drop  
Q2  
Q4  
Low tail current  
G2  
E2  
G4  
E4  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
Low leakage current  
Avalanche energy rated  
RBSOA and SCSOA rated  
0/VBUS  
Kelvin emitter for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
M5 power connectors  
High level of integration  
OUT1  
OUT2  
G1  
E1  
G2  
Benefits  
VBUS  
0/VBUS  
E2  
Stable temperature behavior  
Very rugged  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
E4  
G4  
E3  
G3  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1200  
220  
150  
350  
±20  
690  
V
TC = 25°C  
IC  
Continuous Collector Current  
A
TC = 80°C  
TC = 25°C  
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
RBSOA Reverse Bias Safe Operating Area  
Tj = 125°C 300A @ 1150V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 - 5  
APT website – http://www.advancedpower.com  

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