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APTGT150DU60T PDF预览

APTGT150DU60T

更新时间: 2024-11-05 04:49:39
品牌 Logo 应用领域
ADPOW 双极性晶体管
页数 文件大小 规格书
5页 279K
描述
Dual common source Trench + Field Stop IGBT Power Module

APTGT150DU60T 数据手册

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APTGT150DU60T  
Dual common source  
Trench + Field Stop IGBT®  
Power Module  
VCES = 600V  
IC = 150A @ Tc = 80°C  
Application  
AC Switches  
C1  
C2  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Q1  
Q2  
G1  
E1  
G2  
E2  
Features  
Trench + Field Stop IGBT® Technology  
-
-
-
-
-
-
-
-
Low voltage drop  
Low tail current  
E
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
NTC1  
NTC2  
Low leakage current  
Avalanche energy rated  
RBSOA and SCSOA rated  
Kelvin emitter for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
Lead frames for power connections  
High level of integration  
Internal thermistor for temperature monitoring  
G2  
E2  
C2  
C2  
Benefits  
Stable temperature behavior  
Very rugged  
C1  
E
Solderable terminals for easy PCB mounting  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
E1  
G1  
E2  
G2  
NTC2  
NTC1  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
600  
225  
150  
350  
±20  
480  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
Tj = 150°C  
RBSOA Reverse Bias Safe Operating Area  
300A @ 550V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 - 5  
APT website – http://www.advancedpower.com  

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