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APTGF350DA60G PDF预览

APTGF350DA60G

更新时间: 2024-11-21 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 双极性晶体管
页数 文件大小 规格书
6页 275K
描述
Boost chopper NPT IGBT Power Module

APTGF350DA60G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X5针数:5
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.83外壳连接:ISOLATED
最大集电极电流 (IC):430 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X5JESD-609代码:e1
湿度敏感等级:1元件数量:1
端子数量:5最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1560 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):210 ns
标称接通时间 (ton):51 nsVCEsat-Max:2.5 V

APTGF350DA60G 数据手册

 浏览型号APTGF350DA60G的Datasheet PDF文件第2页浏览型号APTGF350DA60G的Datasheet PDF文件第3页浏览型号APTGF350DA60G的Datasheet PDF文件第4页浏览型号APTGF350DA60G的Datasheet PDF文件第5页浏览型号APTGF350DA60G的Datasheet PDF文件第6页 
APTGF350DA60G  
VCES = 600V  
Boost chopper  
IC = 350A @ Tc = 80°C  
NPT IGBT Power Module  
Application  
AC and DC motor control  
Switched Mode Power Supplies  
Power Factor Correction  
VBUS  
CR1  
Features  
Non Punch Through (NPT) Fast IGBT®  
OUT  
-
-
-
-
-
-
-
-
Low voltage drop  
Low tail current  
Q2  
Switching frequency up to 100 kHz  
Soft recovery parallel diodes  
Low diode VF  
G2  
Low leakage current  
E2  
Avalanche energy rated  
RBSOA and SCSOA rated  
0/VBUS  
Kelvin emitter for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
M5 power connectors  
High level of integration  
Benefits  
Outstanding performance at high frequency  
operation  
VBUS  
0/VBUS  
OUT  
Stable temperature behavior  
Very rugged  
E2  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
G2  
RoHS compliant  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
600  
430  
V
Tc = 25°C  
Tc = 80°C  
Tc = 25°C  
IC  
Continuous Collector Current  
A
350  
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
1225  
±20  
V
W
Tc = 25°C  
1562  
RBSOA Reverse Bias Safe Operating Area  
Tj = 150°C  
800A @ 600V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 - 6  
www.microsemi.com  

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