DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT60M75PVR
Test Conditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
16500
2000
750
700
85
VGS = 0V
VDS = 25V
f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
Qgs
Qgd
VDD = 0.5 VDSS
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
ID = ID[Cont.] @ 25°C
330
25
td(on)
tr
td(off)
tf
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 0.6Ω
20
Turn-off Delay Time
Fall Time
90
12
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
Y
MIN
TYP
MAX
60.5
242
1.3
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
t rr
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
(VGS = 0V, IS = -ID[Cont.]
)
Volts
ns
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
880
31
Q rr
µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.20
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1
2
3
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
PRELIMINAR
4
Starting T = +25°C, L = 1.97mH, R = 25Ω, Peak I = 60.5A
j G L
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
P-Pack Package Outline
41.53 (1.635)
41.02 (1.615)
35.18 (1.385)
34.67 (1.365)
3.43 (.135)
2.92 (.115)
(4-Places)
9.27 (.365)
8.64 (.340)
1.40 (.055)
1.02 (.040)
28.70 (1.130)
28.45 (1.120)
3.43 (.135)
2.92 (.115)
(4-Places)
4.06 (.160)
3.81 (.150)
(5 Places)
51.05 (2.01)
50.55 (1.99)
35.81 (1.41)
35.31 (1.39)
29.34 (1.155)
29.08 (1.145)
10.92 (.430)
10.67 (.420)
5.33 (.210)
4.83 (.190)
4.39 (.173)
4.14 (.163)
(4 Places)
.635 (.025)
.381 (.015)
11.63 (.458)
11.13 (.438)
12.45 (.490)
11.94 (.470)
Dimensions in Millimeters and (Inches)