Datasheet > 晶体管 > IGBT> APT50GP60LDLG

APT50GP60LDLG

更新时间： 2024-11-23 08:33:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		双极性晶体管
页数	文件大小	规格书
9页	194K
描述
Resonant Mode Combi IGBT

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中文翻译

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APT50GP60LDLG 数据手册

TYPICAL PERFORMANCE CURVES

APT50GP60LDL(G)

600V, 50A, V

= 2.2V Typical

CE(ON)

Resonant Mode Combi IGBT^®

The POWER MOS 7^®IGBT used in this resonant mode combi is a new generation of high

voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high

frequency, high voltage switching applications and has been optimized for high frequency

switchmode power supplies.

Features

Typical Applications

•

Low Conduction Loss

•

Induction Heating

Welding

•

SSOA Rated

Low Gate Charge

RoHS Compliant

Ultrafast Tail Current shutoff

Low forward Diode Voltage (V_F)

Ultrasoft Recovery Diode

Medical

High Power Telecom

Resonant Mode Phase Shifted

Bridge

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise speciﬁed.

Parameter

Symbol

UNIT

Ratings

V_CES

V_GE

I_C1

Collector-Emitter Voltage

Gate-Emitter Voltage

600

Volts

Continuous Collector Current @ T_C= 25°C

Continuous Collector Current @ T_C= 110°C

150

I_C2

Amps

Pulsed Collector Current

I_CM

190

Switching Safe Operating Area @ T_J= 150°C

Total Power Dissipation

190A @ 600V

625

SSOA

P_D

Watts

°C

Operating and Storage Junction Temperature Range

T_J,T_STG

-55 to 150

300

T_L

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

Units

V_(BR)CES

V_GE(TH)

Collector-Emitter Breakdown Voltage (V_GE= 0V, I_C= 1.0mA)

Gate Threshold Voltage (V_CE= V_GE, I_C= 1mA, T_j= 25°C)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 50A, T_j= 25°C)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 50A, T_j= 125°C)

600

4.5

2.2

2.1

Volts

2.7

V_CE(ON)

Collector Cut-off Current (V_CE= 600V, V_GE= 0V, T_j= 25°C)

525

I_CES

I_GES

µA

Collector Cut-off Current (V_CE= 600V, V_GE= 0V, T_j= 125°C)

2750

100

Gate-Emitter Leakage Current (V_GE= 20V)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

12 3 4 5 6 7...9

中文翻译

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与APT50GP60LDLG相关器件

型号	品牌	获取价格	描述	数据表
APT50GP60S	ADPOW	获取价格	POWER MOS 7 IGBT
APT50GP60SG	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, D2PAK-3
APT50GP90B	MICROSEMI	获取价格	100A, 900V, N-CHANNEL IGBT, TO-247AD, TO-247, 3 PIN
APT50GP90B2DF2	MICROSEMI	获取价格	100A, 900V, N-CHANNEL IGBT, T-MAX, 3 PIN
APT50GR120B2	MICROSEMI	获取价格	Power Semiconductors Power Modules
APT50GR120JD30	MICROSEMI	获取价格	Power Semiconductors Power Modules
APT50GR120L	MICROSEMI	获取价格	Power Semiconductors Power Modules
APT50GS60BR	MICROSEMI	获取价格	Thunderbolt High Speed NPT IGBT
APT50GS60BR(G)	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 93A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMP
APT50GS60BRDL	MICROSEMI	获取价格	Resonant Mode Combi IGBT

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