生命周期: | Obsolete | 零件包装代码: | TO-247 |
包装说明: | FLANGE MOUNT, R-PSFM-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.76 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 450 V | 最大漏极电流 (ID): | 23 A |
最大漏源导通电阻: | 0.25 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 290 pF | JESD-30 代码: | R-PSFM-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 310 W | 最大脉冲漏极电流 (IDM): | 92 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 163 ns |
最大开启时间(吨): | 83 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT4525DN | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | CHIP |
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APT4525HN | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 21A I(D) | TO-258ISO |
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APT4530AN | ADPOW |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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APT4530BN | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 21A I(D) | TO-247AD |
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APT4530BN-BUTT | ADPOW |
获取价格 |
Power Field-Effect Transistor, 21A I(D), 450V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta |
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APT4530BN-BUTT | MICROSEMI |
获取价格 |
21A, 450V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
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APT4530BN-GULLWING | ADPOW |
获取价格 |
Power Field-Effect Transistor, 21A I(D), 450V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta |
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APT4530CN | ADPOW |
获取价格 |
Transistor |
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APT4530DN | ADPOW |
获取价格 |
Transistor |
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APT4530HN | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 19A I(D) | TO-258ISO |
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