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APT22F120B2 PDF预览

APT22F120B2

更新时间: 2024-09-25 04:32:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
4页 402K
描述
N-Channel FREDFET

APT22F120B2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
风险等级:5.7其他特性:AVALANCHE RATED, HIGH RELIABILITY
雪崩能效等级(Eas):1875 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:1200 V
最大漏极电流 (ID):23 A最大漏源导通电阻:0.7 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):90 A认证状态:Not Qualified
表面贴装:NO端子面层:PURE MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

APT22F120B2 数据手册

 浏览型号APT22F120B2的Datasheet PDF文件第2页浏览型号APT22F120B2的Datasheet PDF文件第3页浏览型号APT22F120B2的Datasheet PDF文件第4页 
APT22F120B2  
APT22F120L  
1200V, 22A, 0.80Ω Max, t ≤270ns  
rr  
N-Channel FREDFET  
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.  
T-MaxTM  
TO-264  
This 'FREDFET' version has a drain-source (body) diode that has been optimized for  
high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft  
rr  
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly  
reduced ratio of C /C result in excellent niose immunity and low switching loss. The  
rss iss  
APT22F120B2  
APT22F120L  
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control  
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching  
at very high frequency.  
D
S
Single die FREDFET  
G
FEATURES  
TYPICAL APPLICATIONS  
• ZVS phase shifted and other full full bridge  
• Fast switching with low EMI  
• Half bridge  
• Low t for high reliability  
rr  
• PFC and other boost converter  
• Buck converter  
• Ultra low C  
rss  
for improved noise immunity  
• Low gate charge  
• Single and two switch forward  
• Flyback  
• Avalanche energy rated  
• RoHS compliant  
Absolute Maximum Ratings  
Symbol Parameter  
Unit  
Ratings  
22  
Continuous Drain Current @ TC = 25°C  
ID  
Continuous Drain Current @ TC = 100°C  
14  
A
Pulsed Drain Current 1  
IDM  
VGS  
EAS  
IAR  
90  
±30  
1875  
12  
V
mJ  
A
Gate-Source Voltage  
Single Pulse Avalanche Energy 2  
Avalanche Current, Repetitive or Non-Repetitive  
Thermal and Mechanical Characteristics  
Symbol Characteristic  
Min  
Typ  
Max  
1040  
0.12  
Unit  
PD  
Total Power Dissipation @ TC = 25°C  
W
RθJC  
Junction to Case Thermal Resistance  
°C/W  
°C  
RθCS  
0.11  
Case to Sink Thermal Resistance, Flat, Greased Surface  
TJ,TSTG  
-55  
150  
300  
Operating and Storage Junction Temperature Range  
TL  
Soldering Temperature for 10 Seconds (1.6mm from case)  
oz  
g
0.22  
6.2  
WT  
Package Weight  
in·lbf  
N·m  
10  
Torque  
Mounting Torque ( TO-264 Package), 4-40 or M3 screw  
1.1  
Microsemi Website - http://www.microsemi.com  

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