Datasheet > APT25GLQ120JCU2

APT25GLQ120JCU2

更新时间： 2024-11-21 20:10:07

品牌	Logo	应用领域
美高森美 - MICROSEMI		栅
页数	文件大小	规格书
5页	343K
描述
Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

APT25GLQ120JCU2 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.73
最大集电极电流 (IC)：	45 A	集电极-发射极最大电压：	1200 V
门极-发射极最大电压：	20 V	元件数量：	1
最高工作温度：	175 °C	最大功率耗散 (Abs)：	170 W
子类别：	Insulated Gate BIP Transistors	VCEsat-Max：	2.4 V
Base Number Matches：	1

APT25GLQ120JCU2 数据手册

APT25GLQ120JCU2

ISOTOP^®Boost chopper

Trench + Field Stop fast IGBT4

Power module

V_CES= 1200V

I_C= 25A @ Tc = 80°C

Application

AC and DC motor control

•

Switched Mode Power Supplies

Power Factor Correction

Brake switch

Features

•

Trench + Field Stop Fast IGBT 4 Technology

Low voltage drop

Low leakage current

Low switching losses

Low leakage current

RBSOA and SCSOA rated

•

Boost SiC Schottky Diode

Zero reverse recovery

Zero forward recovery

Temperature Independent switching behavior

Positive temperature coefficient on VF

•

ISOTOP^®Package (SOT-227)

Very low stray inductance

High level of integration

Benefits

•

Low conduction losses

Stable temperature behavior

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive T_Cof V_CEsat

RoHS Compliant

ISOTOP^®

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

1200

±20

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

Pulsed Collector Current

Gate – Emitter Voltage

P_D

Maximum Power Dissipation

T_C= 25°C

T_j= 150°C

170

RBSOA Reverse Bias Safe Operating Area

50A @ 1100V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

1 - 5

www.microsemi.com

12 3 4 5

中文翻译

下载PDF

与APT25GLQ120JCU2相关器件

型号	品牌	获取价格	描述	数据表
APT25GLQ120JCU2-Module	MICROCHIP	获取价格	IGBT 4 fast Low voltage dropLow tail currentLow leakage currentKelvin emitter for easy dri
APT25GN120B	MICROSEMI	获取价格	Utilizing the latest Field Stop and Trench Gate technologies
APT25GN120B	ADPOW	获取价格	IGBT
APT25GN120B2DQ2	ADPOW	获取价格	IGBT
APT25GN120B2DQ2G	ADPOW	获取价格	IGBT
APT25GN120B2DQ2G	MICROSEMI	获取价格	Power Semiconductors Power Modules
APT25GN120BE3	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 67A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247,
APT25GN120BG	ADPOW	获取价格	IGBT
APT25GN120BG	MICROSEMI	获取价格	Utilizing the latest Field Stop and Trench Gate technologies
APT25GN120S	MICROSEMI	获取价格	Utilizing the latest Field Stop and Trench Gate technologies