Datasheet > APT25GLQ120JCU2

APT25GLQ120JCU2

更新时间： 2024-11-09 20:10:07

品牌	Logo	应用领域
美高森美 - MICROSEMI		栅
页数	文件大小	规格书
5页	343K
描述
Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES

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技术参数
数据手册

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APT25GLQ120JCU2 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.73
最大集电极电流 (IC)：	45 A	集电极-发射极最大电压：	1200 V
门极-发射极最大电压：	20 V	元件数量：	1
最高工作温度：	175 °C	最大功率耗散 (Abs)：	170 W
子类别：	Insulated Gate BIP Transistors	VCEsat-Max：	2.4 V
Base Number Matches：	1

APT25GLQ120JCU2 数据手册

APT25GLQ120JCU2

ISOTOP^®Boost chopper

Trench + Field Stop fast IGBT4

Power module

V_CES= 1200V

I_C= 25A @ Tc = 80°C

Application

AC and DC motor control

•

Switched Mode Power Supplies

Power Factor Correction

Brake switch

Features

•

Trench + Field Stop Fast IGBT 4 Technology

Low voltage drop

Low leakage current

Low switching losses

Low leakage current

RBSOA and SCSOA rated

•

Boost SiC Schottky Diode

Zero reverse recovery

Zero forward recovery

Temperature Independent switching behavior

Positive temperature coefficient on VF

•

ISOTOP^®Package (SOT-227)

Very low stray inductance

High level of integration

Benefits

•

Low conduction losses

Stable temperature behavior

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive T_Cof V_CEsat

RoHS Compliant

ISOTOP^®

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

1200

±20

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

Pulsed Collector Current

Gate – Emitter Voltage

P_D

Maximum Power Dissipation

T_C= 25°C

T_j= 150°C

170

RBSOA Reverse Bias Safe Operating Area

50A @ 1100V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

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