Datasheet > APT10040B2VR_02

APT10040B2VR_02

更新时间： 2024-02-18 01:29:48

品牌	Logo	应用领域
ADPOW		高压
页数	文件大小	规格书
4页	78K
描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

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APT10040B2VR_02 数据手册

APT10040B2VR

APT10040LVR

1000V 25A 0.400W

B2VR

POWER MOS V^®

Power MOS V^®is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V^®

also achieves faster switching speeds through optimized gate layout.

T-MAX™

TO-264

LVR

• Identical Specifications: T-MAX™ or TO-264 Package

• Faster Switching

• Lower Leakage

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT10040

1000

UNIT

V_DSS

I_D

Drain-Source Voltage

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

100

Pulsed Drain Current

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

625

Watts

W/°C

P_D

5.0

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

-55 to 150

300

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

3000

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

1000

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 0.5 I_D[Cont.])

Ohms

µA

0.400

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 2.5mA)

250

±100

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street

Chemin de Magret

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

EUROPE

12 3 4

中文翻译

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与APT10040B2VR_02相关器件

型号	品牌	获取价格	描述	数据表
APT10040B2VRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
APT10040CFN	ETC	获取价格	TRANSISTOR \| MOSFET POWER MODULE \| INDEPENDENT \| 1KV V(BR)DSS \| 24.5A I(D)
APT10040DN	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 1KV V(BR)DSS \| CHIP
APT10040LLC	ADPOW	获取价格	Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
APT10040LVFR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10040LVFR	MICROSEMI	获取价格	Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
APT10040LVFRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
APT10040LVR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
APT10040LVR	MICROSEMI	获取价格	Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
APT10040LVRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Met

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