Datasheet > APT10045B2FLL_03

APT10045B2FLL_03

更新时间： 2024-02-04 02:07:35

品牌	Logo	应用领域
ADPOW		/
页数	文件大小	规格书
5页	94K
描述
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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APT10045B2FLL_03 数据手册

APT10045B2FLL

APT10045LFLL

1000V 23A 0.450Ω

B2FLL

POWER MOS 7 FREDFET

Power MOS 7^®is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7^®by significantly lowering R_DS(ON)

and Q_g. Power MOS 7^®combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

T-MAX™

TO-264

LFLL

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

• Increased Power Dissipation

• Easier To Drive

• Popular T-MAX™ or TO-264 Package

•

FAST RECOVERY BODY DIODE

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT10045

1000

UNIT

V_DSS

I_D

Drain-Source Voltage

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

565

Watts

W/°C

P_D

4.52

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

2500

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

1000

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 11.5A)

Ohms

µA

0.450

250

Zero Gate Voltage Drain Current (V_DS= 1000V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 800V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 2.5mA)

I_DSS

1000

±100

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4 5

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与APT10045B2FLL_03相关器件

型号	品牌	获取价格	描述	数据表
APT10045B2FLLG	MICROSEMI	获取价格	Power Field-Effect Transistor, 23A I(D), 1000V, 0.46ohm, 1-Element, N-Channel, Silicon, Me
APT10045B2LL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT10045B2LL_03	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT10045B2LLG	MICROSEMI	获取价格	Power Field-Effect Transistor, 23A I(D), 1000V, 0.45ohm, 1-Element, N-Channel, Silicon, Me
APT10045JFLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT10045JFLL_03	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT10045JLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT10045JLL_03	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT10045LFLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT10045LFLLG	MICROSEMI	获取价格	Power Field-Effect Transistor, 23A I(D), 1000V, 0.46ohm, 1-Element, N-Channel, Silicon, Me

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