Datasheet > APT10045JFLL_03

APT10045JFLL_03

更新时间： 2024-02-17 02:56:28

品牌	Logo	应用领域
ADPOW		/
页数	文件大小	规格书
5页	95K
描述
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

APT10045JFLL_03 数据手册

APT10045JFLL

1000V 21A 0.450Ω

POWER MOS 7 FREDFET

Power MOS 7^®is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7^®by significantly lowering R_DS(ON)

and Q_g. Power MOS 7^®combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

SOT-227

"UL Recognized"

ISOTOP^®

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

• Increased Power Dissipation

• Easier To Drive

• Popular SOT-227 Package

•

FAST RECOVERY BODY DIODE

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT10045JFLL

UNIT

V_DSS

I_D

Drain-Source Voltage

Volts

1000

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

460

Watts

W/°C

P_D

3.68

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

2500

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

1000

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 11.5A)

Ohms

µA

0.450

250

Zero Gate Voltage Drain Current (V_DS= 1000V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 800V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 2.5mA)

I_DSS

1000

±100

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4 5

中文翻译

下载PDF

与APT10045JFLL_03相关器件

型号	品牌	获取价格	描述	数据表
APT10045JLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT10045JLL_03	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT10045LFLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT10045LFLLG	MICROSEMI	获取价格	Power Field-Effect Transistor, 23A I(D), 1000V, 0.46ohm, 1-Element, N-Channel, Silicon, Me
APT10045LLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT1004R2AN	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 1KV V(BR)DSS \| 3.5A I(D) \| TO-3
APT1004R2BN	ADPOW	获取价格	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT1004R2BN-BUTT	ADPOW	获取价格	Power Field-Effect Transistor, 4A I(D), 1000V, 4.2ohm, 1-Element, N-Channel, Silicon, Meta
APT1004R2BN-GULLWING	ADPOW	获取价格	Power Field-Effect Transistor, 4A I(D), 1000V, 4.2ohm, 1-Element, N-Channel, Silicon, Meta
APT1004R2CN	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 1KV V(BR)DSS \| 3.3A I(D) \| TO-254ISO

与APT10045JFLL_03相关文章

LTM4644/LTM4644-1：创新的四输出同步降压微模块调节器
2024-07-02

2
2N3500：一款多用途NPN硅晶体管的全面解析
2024-07-02

2
最详细资料解析：BA5917AFP参数说明、引脚说明
2024-07-02

3
MAX232IDR数据手册：产品特性、电气参数、替代型号推荐
2024-07-02

1

产品中心

服务支持

精选活动

关于我们

帮助中心

APT10045JFLL_03

APT10045JFLL_03 数据手册

与APT10045JFLL_03相关器件

与APT10045JFLL_03相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

APT10045JFLL_03

APT10045JFLL_03 数据手册

与APT10045JFLL_03相关器件

与APT10045JFLL_03相关文章

您还可以找

您在本页遇到什么问题？