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APT1004R2BN PDF预览

APT1004R2BN

更新时间: 2024-11-24 22:06:35
品牌 Logo 应用领域
ADPOW 晶体晶体管开关脉冲高压局域网高电压电源
页数 文件大小 规格书
4页 55K
描述
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT1004R2BN 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
风险等级:5.8Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:1000 V最大漏极电流 (Abs) (ID):4 A
最大漏极电流 (ID):4 A最大漏源导通电阻:4.2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):60 pF
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
功耗环境最大值:180 W最大功率耗散 (Abs):180 W
最大脉冲漏极电流 (IDM):16 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):77 ns最大开启时间(吨):43 ns
Base Number Matches:1

APT1004R2BN 数据手册

 浏览型号APT1004R2BN的Datasheet PDF文件第2页浏览型号APT1004R2BN的Datasheet PDF文件第3页浏览型号APT1004R2BN的Datasheet PDF文件第4页 
D
S
TO-247  
G
APT1004RBN 1000V 4.4A 4.00  
APT1004R2BN 1000V 4.0A 4.20Ω  
POWER MOS IV®  
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS  
MAXIMUM RATINGS  
All Ratings: T = 25°C unless otherwise specified.  
C
APT  
APT  
Symbol Parameter  
1004RBN  
1004R2BN  
UNIT  
VDSS  
1000  
4.4  
1000  
4.0  
Volts  
Drain-Source Voltage  
ID  
Continuous Drain Current @ TC = 25°C  
Amps  
1
IDM  
VGS  
17.6  
16  
Pulsed Drain Current  
Gate-Source Voltage  
±30  
Volts  
Watts  
W/°C  
180  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
PD  
1.44  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
Lead Temperature: 0.063" from Case for 10 Sec.  
-55 to 150  
300  
°C  
STATIC ELECTRICAL CHARACTERISTICS  
Characteristic / Test Conditions / Part Number  
Symbol  
MIN  
1000  
1000  
4.4  
TYP  
MAX  
UNIT  
APT1004RBN  
APT1004R2BN  
APT1004RBN  
APT1004R2BN  
APT1004RBN  
APT1004R2BN  
Drain-Source Breakdown Voltage  
BVDSS  
Volts  
(VGS = 0V, ID = 250 µA)  
2
On State Drain Current  
ID(ON)  
Amps  
Ohms  
µA  
(VDS > ID(ON) x RDS(ON) Max, VGS = 10V)  
4.0  
2
4.00  
4.20  
250  
1000  
±100  
4
Drain-Source On-State Resistance  
RDS(ON)  
(VGS = 10V, 0.5 ID [Cont.])  
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)  
IDSS  
IGSS  
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)  
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)  
nA  
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)  
THERMAL CHARACTERISTICS  
2
Volts  
Symbol Characteristic  
MIN  
TYP  
MAX  
0.68  
40  
UNIT  
RθJC  
RθJA  
Junction to Case  
°C/W  
Junction to Ambient  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
USA  
405 S.W. Columbia Street  
EUROPE  
Bend, Oregon 97702-1035  
F-33700 Merignac - France  
Phone: (541) 382-8028  
Phone: (33) 5 57 92 15 15  
FAX: (541) 388-0364  
FAX: (33) 5 56 47 97 61  
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord  

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APT1004RBN-GULLWING MICROSEMI

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