是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | unknown |
风险等级: | 5.8 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 1000 V | 最大漏极电流 (Abs) (ID): | 4 A |
最大漏极电流 (ID): | 4 A | 最大漏源导通电阻: | 4.2 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 60 pF |
JEDEC-95代码: | TO-247AD | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 180 W | 最大功率耗散 (Abs): | 180 W |
最大脉冲漏极电流 (IDM): | 16 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 77 ns | 最大开启时间(吨): | 43 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT1004R2BN-BUTT | ADPOW |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 1000V, 4.2ohm, 1-Element, N-Channel, Silicon, Meta | |
APT1004R2BN-GULLWING | ADPOW |
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Power Field-Effect Transistor, 4A I(D), 1000V, 4.2ohm, 1-Element, N-Channel, Silicon, Meta | |
APT1004R2CN | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3.3A I(D) | TO-254ISO | |
APT1004R2GN | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3A I(D) | TO-257ISO | |
APT1004R2KN | ADPOW |
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N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
APT1004RAN | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3.9A I(D) | TO-3 | |
APT1004RBN | ADPOW |
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N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
APT1004RBN-BUTT | MICROSEMI |
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4.4A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | |
APT1004RBNG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Meta | |
APT1004RBN-GULLWING | MICROSEMI |
获取价格 |
4.4A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN |