AP9575GI

更新时间： 2024-10-28 03:19:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	61K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP9575GI 数据手册

AP9575GI

RoHS-compliant Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Lower Gate Charge

BV_DSS

R_DS(ON)

I_D

-60V

70mΩ

-16A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

TO-220CFM(I)

Description

The Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-220CFM isolation package is universally preferred for all

commercial-industrial through hole applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

-60

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

-16

-10

-60

P_D@T_C=25℃

Total Power Dissipation

31.25

0.25

Linear Derating Factor

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

4.0

Rthj-a

Data and specifications subject to change without notice

200515071-1/4

12 3 4

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