AP60L02S

更新时间： 2024-02-12 05:50:04

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	84K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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技术参数
数据手册

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AP60L02S 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.82

AP60L02S 数据手册

AP60L02S/P

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low Gate Charge

BV_DSS

R_DS(ON)

I_D

25V

12mΩ

50A

▼ Simple Drive Requirement

▼ Fast Switching

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

TO-263(S)

TO-220(P)

The TO-263 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters. The through-hole version

(AP60L02P) is available for low-profile applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

180

62.5

0.5

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-case

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

2.0

Rthj-amb

Data & specifications subject to change without notice

200218032

12 3 4 5 6

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