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AP60PN72RLEN PDF预览

AP60PN72RLEN

更新时间: 2024-09-16 17:15:39
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
5页 65K
描述
SOT-23

AP60PN72RLEN 数据手册

 浏览型号AP60PN72RLEN的Datasheet PDF文件第2页浏览型号AP60PN72RLEN的Datasheet PDF文件第3页浏览型号AP60PN72RLEN的Datasheet PDF文件第4页浏览型号AP60PN72RLEN的Datasheet PDF文件第5页 
AP60PN72RLEN  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
600V  
72Ω  
53mA  
2KV  
D
Small Package Outline  
ESD Diode Protected  
S
RoHS Compliant & Halogen-Free  
HBM ESD  
SOT-23  
G
Description  
D
AP60PN72 series are from Advanced Power innovated design and silicon  
process technology to achieve the lowest possible on-resistance and fast  
switching performance. It provides the designer with an extreme efficient  
device for use in a wide range of power applications.  
G
The special design SOT-23 package with good thermal performance is  
widely preferred for all commercial-industrial surface mount applications  
using infrared reflow technique and suited for voltage conversion or  
switch applications.  
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
VDS  
VGS  
Drain-Source Voltage  
600  
V
Gate-Source Voltage  
+20  
V
ID@TA=25  
ID@TA=70℃  
IDM  
Drain Current3, VGS @ 10V  
Drain Current3, VGS @ 10V  
Pulsed Drain Current1  
53  
mA  
mA  
mA  
W
43  
300  
PD@TA=25℃  
TSTG  
Total Power Dissipation  
0.5  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
250  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
201607271