AP60PN72RLEN
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
600V
72Ω
53mA
2KV
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▼ Small Package Outline
▼ ESD Diode Protected
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▼ RoHS Compliant & Halogen-Free
HBM ESD
SOT-23
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Description
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AP60PN72 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
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The special design SOT-23 package with good thermal performance is
widely preferred for all commercial-industrial surface mount applications
using infrared reflow technique and suited for voltage conversion or
switch applications.
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Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
VDS
VGS
Drain-Source Voltage
600
V
Gate-Source Voltage
+20
V
ID@TA=25℃
ID@TA=70℃
IDM
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
53
mA
mA
mA
W
43
300
PD@TA=25℃
TSTG
Total Power Dissipation
0.5
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
TJ
℃
Thermal Data
Symbol
Parameter
Value
250
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
Data and specifications subject to change without notice
1
201607271