AP60SC060ADTL
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
BVDSS
600V
60mΩ
49A
D
S
▼ Low trr / Qrr
RDS(ON)
3,4
▼ Simple Drive Requirement
ID
G
▼ RoHS Compliant & Halogen-Free
Description
D
AP60SC060AD series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G
TOLL (TL)
S
S
The TOLL package is a perfect solution for high power density and
high power efficiency application.
S
S
S
S
S
o
.
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Rating
600
Units
V
VDS
VGS
VGS
Gate-Source Voltage
+20
V
Gate-Source Voltage, AC (f > 1Hz)
Drain Current, VGS @ 10V3,4
Drain Current, VGS @ 10V3,4
Pulsed Drain Current1
+30
V
ID@TC=25℃
ID@TC=100℃
IDM
49
A
31
A
130
A
dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …480V )
Total Power Dissipation
Total Power Dissipation7
Single Pulse Avalanche Energy5
Peak Diode Recovery dv/dt6
Storage Temperature Range
Operating Junction Temperature Range
30
V/ns
W
PD@TC=25℃
PD@TA=25℃
EAS
277.7
3.12
W
450
mJ
V/ns
℃
dv/dt
50
TSTG
-55 to 150
-55 to 150
TJ
℃
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient7
0.45
40
Rthj-a
1
202311141