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AP60SA180DR PDF预览

AP60SA180DR

更新时间: 2024-11-07 17:15:43
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 70K
描述
TO-262

AP60SA180DR 数据手册

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AP60SA180DR  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
100% Rg & UIS Test  
BVDSS  
600V  
0.18Ω  
20A  
D
S
Low trr / Qrr  
RDS(ON)  
3,4  
Simple Drive Requirement  
ID  
G
RoHS Compliant & Halogen-Free  
Description  
AP60SA180D series are from Advanced Power innovated design  
and silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
G
D
TO-262(R)  
S
The TO-262 package is widely preferred for commercial-industrial  
through-hole applications and suited for low voltage applications  
such as DC/DC converters.  
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Drain-Source Voltage  
Rating  
600  
Units  
V
VDS  
VGS  
VGS  
Gate-Source Voltage  
+20  
V
Gate-Source Voltage, AC (f > 1Hz)  
Drain Current, VGS @ 10V3,4  
Drain Current, VGS @ 10V3,4  
Pulsed Drain Current1  
+30  
V
ID@TC=25  
ID@TC=100℃  
IDM  
20  
A
12.3  
44  
A
A
dv/dt  
MOSFET dv/dt Ruggedness (VDS = 0 …480V )  
Total Power Dissipation  
40  
V/ns  
W
PD@TC=25℃  
PD@TA=25℃  
EAS  
125  
Total Power Dissipation  
2
W
Single Pulse Avalanche Energy5  
Peak Diode Recovery dv/dt6  
Storage Temperature Range  
Operating Junction Temperature Range  
200  
mJ  
V/ns  
dv/dt  
15  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
1
Rthj-a  
62  
1
201902151