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AP60N03GS PDF预览

AP60N03GS

更新时间: 2024-11-04 08:32:07
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 75K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP60N03GS 技术参数

生命周期:Contact Manufacturer零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.67配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):55 A
最大漏源导通电阻:0.0135 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):215 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP60N03GS 数据手册

 浏览型号AP60N03GS的Datasheet PDF文件第2页浏览型号AP60N03GS的Datasheet PDF文件第3页浏览型号AP60N03GS的Datasheet PDF文件第4页 
AP60N03GS/P  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Low On-Resistance  
BVDSS  
RDS(ON)  
ID  
30V  
13.5mΩ  
55A  
D
S
Fast Switching  
Simple Drive Requirement  
G
Description  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
D
S
TO-263(S)  
TO-220(P)  
The TO-263 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters. The through-hole version  
(AP60N03GP) is available for low-profile applications.  
G
D
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±20  
55  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
A
35  
A
215  
62.5  
0.5  
A
PD@TC=25℃  
Total Power Dissipation  
W
Linear Derating Factor  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
2.0  
Units  
/W  
/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
62  
Data & specifications subject to change without notice  
201221041  

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