AP60N03S

更新时间： 2024-11-18 08:32:07

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	80K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP60N03S 数据手册

AP60N03S

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low On-Resistance

BV_DSS

R_DS(ON)

I_D

30V

13.5mΩ

55A

▼ Fast Switching

▼ Simple Drive Requirement

TO-263

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The TO-263 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters. The through-hole version

(AP60N03P) is available for low-profile applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

215

62.5

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

0.5

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

2.0

Rthj-a

Data & specifications subject to change without notice

200218032

12 3 4 5 6

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