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AP60MQ115IT PDF预览

AP60MQ115IT

更新时间: 2024-10-31 17:15:19
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 109K
描述
TO-220CFM-T

AP60MQ115IT 数据手册

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AP60MQ115IT  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
100% Rg & UIS Test  
BVDSS  
600V  
0.115  
35.7A  
D
S
Fast Switching Characteristic  
RDS(ON)  
3,4  
Simple Drive Requirement  
ID  
G
RoHS Compliant & Halogen-Free  
Description  
AP60MQ115 series are from Advanced Power innovated design and  
silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
G
D
S
TO-220CFM-T(IT)  
The TO-220CFM package is widely preferred for all commercial-  
industrial through hole applications. The mold compound provides a  
high isolation voltage capability and low thermal resistance between  
the tab and the external heat-sink.  
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Drain-Source Voltage  
Rating  
600  
Units  
V
VDS  
VGS  
VGS  
Gate-Source Voltage  
+20  
V
Gate-Source Voltage, AC (f > 1Hz)  
Drain Current, VGS @ 10V3,4  
Drain Current, VGS @ 10V3,4  
Pulsed Drain Current1  
+30  
V
ID@TC=25  
ID@TC=100℃  
IDM  
35.7  
A
22.5  
A
95  
A
dv/dt  
MOSFET dv/dt Ruggedness (VDS = 0 …480V )  
Total Power Dissipation  
20  
V/ns  
W
PD@TC=25℃  
PD@TA=25℃  
EAS  
41.6  
Total Power Dissipation  
1.92  
W
Single Pulse Avalanche Energy5  
Peak Diode Recovery dv/dt6  
Storage Temperature Range  
Operating Junction Temperature Range  
200  
mJ  
V/ns  
dv/dt  
30  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
3
Rthj-a  
65  
1
202308141  

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