AP60MQ115IT
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
BVDSS
600V
0.115Ω
35.7A
D
S
▼ Fast Switching Characteristic
RDS(ON)
3,4
▼ Simple Drive Requirement
ID
G
▼ RoHS Compliant & Halogen-Free
Description
AP60MQ115 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G
D
S
TO-220CFM-T(IT)
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Rating
600
Units
V
VDS
VGS
VGS
Gate-Source Voltage
+20
V
Gate-Source Voltage, AC (f > 1Hz)
Drain Current, VGS @ 10V3,4
Drain Current, VGS @ 10V3,4
Pulsed Drain Current1
+30
V
ID@TC=25℃
ID@TC=100℃
IDM
35.7
A
22.5
A
95
A
dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …480V )
Total Power Dissipation
20
V/ns
W
PD@TC=25℃
PD@TA=25℃
EAS
41.6
Total Power Dissipation
1.92
W
Single Pulse Avalanche Energy5
Peak Diode Recovery dv/dt6
Storage Temperature Range
Operating Junction Temperature Range
200
mJ
V/ns
℃
dv/dt
30
TSTG
-55 to 150
-55 to 150
TJ
℃
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
3
Rthj-a
65
1
202308141