Datasheet > AP50GT60SW-HF

AP50GT60SW-HF

更新时间： 2024-09-15 12:27:27

品牌	Logo	应用领域
富鼎先进 - A-POWER		晶体晶体管栅
页数	文件大小	规格书
3页	66K
描述
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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中文翻译

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数据手册

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AP50GT60SW-HF 数据手册

AP50GT60SW-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL INSULATED GATE

BIPOLAR TRANSISTOR

Features

V_CES

I_C

600V

45A

▼ High Speed Switching

▼ Low Saturation Voltage

_CE(sat),Typ.=1.85V@I_C=45A

TO-3P

▼ Built-in Fast Recovery Diode

▼ RoHS Compliant & Halogen-Free

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_CES

Collector-Emitter Voltage

600

+30

V_GE

Gate-Emitter Voltage

Collector Current

I_C@T_C=25^oC

I_C@T_C=100^oC

I_CM

I_F@T_C=100^oC

P_D@T_C=25^oC

T_STG

Collector Current

Pulsed Collector Current

Diode Forward Current

Maximum Power Dissipation

Storage Temperature Range

180

250

^oC

-55 to 150

150

T_J

Operating Junction Temperature Range

Maximum Lead Temp. for Soldering Purposes

, 1/8" from case for 5 seconds .

T_L

300

Notes:

1.Pulse width limited by max. junction temperature .

Thermal Data

Symbol

Parameter

Value

Units

^oC/W

Rthj-c

Rthj-c(Diode) Thermal Resistance Junction-Case

Rthj-a Thermal Resistance Junction-Ambient

Thermal Resistance Junction-Case

0.5

1.2

Electrical Characteristics@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

_GE=+30V, V_CE=0V

Min. Typ. Max. Units

I_GES

I_CES

Gate-to-Emitter Leakage Current

Collector-Emitter Leakage Current

Collector-Emitter Saturation Voltage

+100

V_CE=600V, V_GE=0V

V_GE=15V, I_C=45A

V_CE=V_GE, I_C=250uA

I_C=45A

V_CE(sat)

V_GE(th)

Q_g

1.85

2.4

Gate Threshold Voltage

Total Gate Charge

Gate-Emitter Charge

Gate-Collector Charge

Turn-on Delay Time

Rise Time

2.5

7.5

118

188

V_CE=400V

Q_ge

Q_gc

t_d(on)

t_r

V_GE=15V

_CE=300V,

I_c=45A,

_GE=15V,

t_d(off)

t_f

Turn-off Delay Time

Fall Time

140

180

0.8

1.4

R_G=5Ω,

360

Inductive Load

E_on

Turn-On Switching Loss

Turn-Off Switching Loss

Input Capacitance

E_off

_GE=0V

C_ies

C_oes

C_res

3200 5120

V_CE=30V

f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

240

I_F=20A

V_F

t_rr

FRD Forward Voltage

1.45

1.8

I_F=20A

FRD Reverse Recovery Time

FRD Reverse Recovery Charge

Q_rr

di/dt = 100 A/us

120

Data and specifications subject to change without notice

201107271

12 3

中文翻译

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与AP50GT60SW-HF相关器件

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