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AP50T10GJ-HF PDF预览

AP50T10GJ-HF

更新时间: 2024-11-26 01:19:23
品牌 Logo 应用领域
富鼎先进 - A-POWER 开关脉冲晶体管
页数 文件大小 规格书
5页 70K
描述
Fast Switching Characteristic

AP50T10GJ-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:TO-251包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.67
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):37 A最大漏源导通电阻:0.03 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-251
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):120 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP50T10GJ-HF 数据手册

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AP50T10GH/J-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
100V  
30mΩ  
37A  
Lower Gate Charge  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
AP50T10 series are from Advanced Power innovated design and  
silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
G
D
S
TO-252(H)  
The TO-252 package is widely preferred for all commercial-  
industrial surface mount applications using infrared reflow  
technique and suited for high current application due to the low  
connection resistance. The through-hole version (AP50T10GJ) is  
available for low-profile applications.  
G
D
S
TO-251(J)  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
100  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
37  
A
ID@TC=100℃  
23  
A
IDM  
120  
A
PD@TC=25℃  
Total Power Dissipation  
Total Power Dissipation3  
Single Pulse Avalanche Energy4  
Avalanche Current1  
89.2  
2
W
W
mJ  
A
PD@TA=25℃  
EAS  
IAR  
60  
20  
EAR  
TSTG  
TJ  
Repetitive Avalanche Energy1  
Storage Temperature Range  
Operating Junction Temperature Range  
8.9  
mJ  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
Maximum Thermal Resistance, Junction-ambient  
1.4  
62.5  
110  
Rthj-a  
Rthj-a  
Data and specifications subject to change without notice  
1
201411284  

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1.2A Step-Down Converter with 1.4MHz Switching Frequency