Datasheet > AP50WN1K5H

AP50WN1K5H

更新时间： 2024-11-26 01:23:15

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	67K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP50WN1K5H 数据手册

AP50WN1K5H

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% UIS Test

BV_DSS

500V

1.55Ω

▼ Simple Drive Requirement

R_DS(ON)

▼ Fast Switching Characteristic

I_D

▼ RoHS Compliant & Halogen-Free

Description

AP50WN1K5 series are from the innovated design and silicon

process technology to achieve the lowest possible on-resistance and

fast switching performance. It provides the designer with an extreme

efficient device for use in a wide range of power applications.

TO-252(H)

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications using infrared reflow technique and

suited for high current application due to the low connection

resistance.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

500

Gate-Source Voltage

+30

I_D@T_C=25℃

Drain Current, V_GS@ 10V³

Pulsed Drain Current¹

I_DM

P_D@T_C=25℃

Total Power Dissipation

Total Power Dissipation⁵

Single Pulse Avalanche Energy⁴

Storage Temperature Range

Operating Junction Temperature Range

℃

P_D@T_A=25℃

E_AS

T_STG

T_J

12.5

-55 to 150

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)⁵

2.5

Rthj-a

62.5

Data & specifications subject to change without notice

201609021

12 3 4 5

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