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AP2302LMTR-E1 PDF预览

AP2302LMTR-E1

更新时间: 2024-02-25 17:14:36
品牌 Logo 应用领域
BCDSEMI 稳压器双倍数据速率
页数 文件大小 规格书
12页 140K
描述
2A DDR TERMINATION REGULATOR

AP2302LMTR-E1 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.84
Base Number Matches:1

AP2302LMTR-E1 数据手册

 浏览型号AP2302LMTR-E1的Datasheet PDF文件第2页浏览型号AP2302LMTR-E1的Datasheet PDF文件第3页浏览型号AP2302LMTR-E1的Datasheet PDF文件第4页浏览型号AP2302LMTR-E1的Datasheet PDF文件第6页浏览型号AP2302LMTR-E1的Datasheet PDF文件第7页浏览型号AP2302LMTR-E1的Datasheet PDF文件第8页 
Preliminary Datasheet  
2A DDR TERMINATION REGULATOR  
AP2302L  
Electrical Characteristics  
(TJ=25oC, VIN=2.5V, VCNTL=3.3V, VREFEN=1.25V, COUT=10µF (Ceramic), unless otherwise specified.)  
Parameter  
Symbol  
Conditions  
ΙL=0Α (Note 4)  
Min  
Typ  
Max Unit  
Output Offset Voltage  
VOS  
-20  
0
20  
mV  
IL=0 to 2A  
DDR I  
-20  
-20  
0
20  
IL=0 to -2A  
Load  
Regulation  
mV  
VOUT  
IL=0 to 2A  
DDR II  
0
20  
IL=0 to -2A  
Quiescent Current of VCNTL  
Leakage Current in Shutdown Mode  
Protection  
IQ  
No Load  
3
3
5
6
mA  
ISHDN  
VREFEN<0.2V, RL=180Ω  
µA  
Current Limit  
ILIMIT  
TSHDN  
2.6  
0.8  
A
oC  
oC  
Thermal Shutdown Temperature  
Thermal Shutdown Hysteresis  
Shutdown Function  
3.3V VCNTL 5V  
150  
50  
Output=High  
Output=Low  
Shutdown Threshold Trigger  
V
0.2  
Note 4: VOS is the voltage measurement defined as VOUT subtracted from VREFEN  
.
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
5

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