Datasheet > AP2302N-HF

AP2302N-HF

更新时间： 2024-11-20 12:56:15

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	140K
描述
Advanced Power MOSFETs

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数据手册

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AP2302N-HF 数据手册

Product specification

AP2302N-HF

▼ Capable of 2.5V Gate Drive

▼ Lower Gate Charge

BV_DSS

R_DS(ON)

I_D

20V

64mΩ

3.2A

▼ Surface Mount Package

▼ RoHS Compliant & Halogen-Free

SOT-23S

Description

Advanced Power MOSFETs utilized advanced processing techniques to

achieve the lowest possible on-resistance, extremely efficient and

cost-effectiveness device.

The SOT-23S package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications such as

DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

+12

Gate-Source Voltage

Continuous Drain Current³, V_GS@ 4.5V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

3.2

2.6

P_D@T_A=25℃

T_STG

Total Power Dissipation

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

125

℃/W

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