Datasheet > AP2302DTR-E1

AP2302DTR-E1

更新时间： 2024-02-17 00:42:38

品牌	Logo	应用领域
BCDSEMI		稳压器双倍数据速率
页数	文件大小	规格书
13页	154K
描述
3A DDR TERMINATION REGULATOR

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技术参数
数据手册

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AP2302DTR-E1 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	Base Number Matches：	1

AP2302DTR-E1 数据手册

Preliminary Datasheet

3A DDR TERMINATION REGULATOR

AP2302

Absolute Maximum Ratings (Note 1)

Value

Parameter

Symbol

V_CNTL

P_D

Unit

Supply Voltage for Internal Circuit

Power Dissipation

Internally Limited

ESD (Human Body Model)

Junction Temperature

ESD

T_J

^oC

150

T_STG

Storage Temperature Range

-65 to 150

260

T_LEAD

Lead Temperature (Soldering, 10sec)

SOIC-8

160

130

^oC/W

θ_JA

Package Thermal Resistance (Free Air)

TO-252-5L

TO-263-5L

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.

These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated

under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods

may affect device reliability.

Recommended Operating Conditions

Parameter

Symbol

Min

Typ

Max

Unit

V_CNTL(Note 2, 3)ꢀ

Supply Voltage for Internal Circuit

3.3

DDR I

2.5

1.8

V_IN

T_J

V_CNTL

Power Input

1.6

DDR II

^oC

Junction Temperature

125

Note 2: Keep V_CNTL≥V_INin power on and power off sequences.

Note 3: For safe operation, V_CNTLMUST be tied to 3.3V rather than 5V.

Jul. 2006 Rev. 1. 2

BCD Semiconductor Manufacturing Limited

1 2 345 6 7...13

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