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AP20AN160J PDF预览

AP20AN160J

更新时间: 2024-11-28 17:15:31
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 71K
描述
TO-251

AP20AN160J 数据手册

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AP20AN160J  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
100% Rg & UIS Test  
BVDSS  
200V  
160mΩ  
18A  
Simple Drive Requirement  
RDS(ON)  
4
Lower Gate Charge  
ID  
G
RoHS Compliant & Halogen-Free  
Description  
AP20AN160series arefromAdvancedPowerinnovateddesign  
and silicon process technology to achieve the lowest possible on-  
resistanceandfastswitchingperformance.Itprovidesthedesigner  
withanextremeefficientdevicefor usein awiderange ofpower  
applications.
G
D
S
TO-251(J)  
ThestraightleadversionTO-251package iswidelypreferredfor all  
commercial-industrialthroughholeapplications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
200  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V4  
Pulsed Drain Current1  
ID@TC=25  
18  
A
IDM  
72  
A
PD@TC=25℃  
Total Power Dissipation  
83.3  
W
W
mJ  
PD@TA=25℃  
Total Power Dissipation  
1.13  
EAS  
TSTG  
TJ  
Single Pulse Avalanche Energy3  
Storage Temperature Range  
Operating Junction Temperature Range  
50  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
1.5  
Rthj-a  
110  
1
201904171  

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Peizoresistive Sensor, 0Psi Min, 150Psi Max, 1.5%, 4.6325-4.7675V, Rectangular, Through Ho