生命周期: | Contact Manufacturer | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.62 |
最大集电极电流 (IC): | 33 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE WITH BUILT-IN DIODE | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 340 ns | 标称接通时间 (ton): | 60 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP20GT60I | A-POWER |
获取价格 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
AP20GT60P-HF | A-POWER |
获取价格 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
AP20GT60SW | A-POWER |
获取价格 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
AP20GT60W | A-POWER |
获取价格 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
AP20N-001MG | FUJIKURA |
获取价格 |
Peizoresistive Sensor, 0Psi Min, 150Psi Max, 1.5%, 4.6325-4.7675V, Rectangular, Through Ho | |
AP20N-001MG-STICK | FUJIKURA |
获取价格 |
Peizoresistive Sensor, 0Psi Min, 150Psi Max, 1.5%, 4.6325-4.7675V, Rectangular, Through Ho | |
AP20N-025KG | FUJIKURA |
获取价格 |
Peizoresistive Sensor, 0Psi Min, 3Psi Max, 1.5%, 4.6325-4.7675V, Rectangular, Through Hole | |
AP20N-025KG-STICK | FUJIKURA |
获取价格 |
Peizoresistive Sensor, 0Psi Min, 3Psi Max, 1.5%, 4.6325-4.7675V, Rectangular, Through Hole | |
AP20N03GP | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP20N03GS | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |