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AP20GT60ASP-HF PDF预览

AP20GT60ASP-HF

更新时间: 2024-11-04 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管
页数 文件大小 规格书
3页 101K
描述
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP20GT60ASP-HF 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.62
最大集电极电流 (IC):33 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):340 ns标称接通时间 (ton):60 ns
Base Number Matches:1

AP20GT60ASP-HF 数据手册

 浏览型号AP20GT60ASP-HF的Datasheet PDF文件第2页浏览型号AP20GT60ASP-HF的Datasheet PDF文件第3页 
AP20GT60ASP-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL INSULATED GATE  
BIPOLAR TRANSISTOR  
Features  
VCES  
IC  
600V  
19A  
High Speed Switching  
Low Saturation Voltage  
G
TO-220(P)  
C
E
VCE(sat),typ.=1.7V@IC=19A  
C
E
RoHS Compliant Product  
G
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
V
VCES  
Collector-Emitter Voltage  
600  
+20  
33  
VGE  
Gate-Emitter Voltage  
V
IC@TC=25oC  
IC@TC=100oC  
ICM  
Collector Current  
A
Collector Current  
19  
A
Pulsed Collector Current1  
Diode Forward Current  
Diode Pulse Forward Current  
Maximum Power Dissipation  
Storage Temperature Range  
72  
A
IF@TC=100oC  
8
A
IFM  
40  
A
PD@TC=25oC  
TSTG  
78.1  
-55 to 150  
150  
W
oC  
oC  
TJ  
Operating Junction Temperature Range  
Notes:  
1.Pulse width limited by Max. junction temperature .  
Thermal Data  
Symbol  
Parameter  
Value  
1.6  
Units  
oC/W  
oC/W  
oC/W  
Rthj-c  
Thermal Resistance Junction-Case  
Rthj-c(Diode) Thermal Resistance Junction-Case  
Rthj-a Thermal Resistance Junction-Ambient  
2.4  
62  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
IGES  
Parameter  
Gate-to-Emitter Leakage Current  
Collector-Emitter Leakage Current  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Gate Threshold Voltage  
Total Gate Charge  
Test Conditions  
GE=+20V, VCE=0V  
VCE=600V, VGE=0V  
Min. Typ. Max. Units  
V
-
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
+100 nA  
ICES  
VCE(sat)  
VCE(sat)  
VGE(th)  
Qg  
-
1
mA  
V
V
V
V
GE=15V, IC=19A  
GE=15V, IC=25A  
CE=VGE, IC=250uA  
1.7  
1.9  
-
2.2  
-
V
6
V
IC=20A  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
mJ  
mJ  
pF  
pF  
pF  
95  
16  
35  
40  
20  
140  
200  
0.1  
1
150  
V
V
CC=480V  
GE=15V  
Qge  
Gate-Emitter Charge  
-
Qgc  
Gate-Collector Charge  
Turn-on Delay Time  
-
VCE=480V,  
Ic=20A,  
td(on)  
tr  
td(off)  
tf  
-
Rise Time  
-
V
GE=15V,  
Turn-off Delay Time  
-
RG=5,  
Fall Time  
400  
Inductive Load  
Eon  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Input Capacitance  
-
-
Eoff  
V
V
GE=0V  
Cies  
Coes  
Cres  
2760 4400  
CE=30V  
Output Capacitance  
65  
40  
-
-
Reverse Transfer Capacitance  
f=1.0MHz  
IF=8A  
V
VF  
trr  
FRD Forward Voltage  
-
-
-
1.8  
30  
30  
2.4  
IF=8A  
ns  
nC  
FRD Reverse Recovery Time  
FRD Reverse Recovery Charge  
-
-
Qrr  
di/dt = 100 A/μs  
Data and specifications subject to change without notice  
1
201112271  

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