AP20G45EJ

更新时间： 2024-11-23 02:51:51

品牌	Logo	应用领域
富鼎先进 - A-POWER		栅
页数	文件大小	规格书
4页	75K
描述
N-CHANNEL INSULATED GATE

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中文翻译

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数据手册

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AP20G45EJ 数据手册

AP20G45EH/J

Advanced Power

Electronics Corp.

N-CHANNEL INSULATED GATE

BIPOLAR TRANSISTOR

Description

V_CES

I_CP

450V

130A

TO-252(H)

TO-251(J)

* High Input Impedance

* High Pick Current Capability

* 4.5V Gate Drive

* Strobe Flash Applications

Absolute Maximum Ratings

Symbol

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Rating

Units

V_CES

V_GE

I_GEP

I_CP

450

± 6

Pulsed Gate-Emitter Voltage

Pulsed Collector Current

Maximum Power Dissipation

Storage Temperature Range

± 8

130

P_D@T_C=25℃

℃

T_STG

T_J

-55 to 150

Operating Junction Temperature Range

Electrical Characteristics@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Gate-Emitter Leakage Current

Collector-Emitter Leakage Current (Tj=25℃)

Collector-Emitter Saturation Voltage

Gate Threshold Voltage

Total Gate Charge

Test Conditions

Min. Typ. Max. Units

V_GE=6V, V_CE=0V

I_GES

V_CE=450V, V_GE=0V

V_GE=4.5V, I_CP=130A (Pulsed)

V_CE=V_GE, I_C=250uA

I_C=40A

I_CES

V_CE(sat)

V_GE(th)

Q_g

1.2

V_CE=300V

Q_ge

Gate-Emitter Charge

Gate-Collector Charge

Turn-on Delay Time

V_GE=5V

Q_gc

5.4

5.5

640

2.6

2095

145

V_CC=200V

t_d(on)

t_r

t_d(off)

t_f

I_C=40A

Rise Time

R_G=25Ω

Turn-off Delay Time

V_GE=5V

Fall Time

V_GE=0V

℃/W

C_ies

C_oes

C_res

Rthj-c

Input Capacitance

V_CE=25V

Output Capacitance

Reverse Transfer Capacitance

Thermal Resistance Junction-Case

f=1.0MHz

Data and specifications subject to change without notice

200124032

12 3 4

中文翻译

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