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AP20GT60W PDF预览

AP20GT60W

更新时间: 2024-11-19 12:26:39
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管
页数 文件大小 规格书
3页 103K
描述
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP20GT60W 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:TO-3P包装说明:FLANGE MOUNT, R-PSFM-T3
针数:2Reach Compliance Code:compliant
风险等级:5.62最大集电极电流 (IC):40 A
集电极-发射极最大电压:600 V配置:SINGLE
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):325 ns标称接通时间 (ton):70 ns
Base Number Matches:1

AP20GT60W 数据手册

 浏览型号AP20GT60W的Datasheet PDF文件第2页浏览型号AP20GT60W的Datasheet PDF文件第3页 
AP20GT60W  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL INSULATED GATE  
BIPOLAR TRANSISTOR  
Features  
VCES  
IC  
600V  
20A  
C
High Speed Switching  
Low Saturation Voltage  
V
CE(sat),typ.=1.8V@IC=20A  
C
G
RoHS Compliant Product  
G
C
TO-3P  
E
E
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
V
VCES  
Collector-Emitter Voltage  
600  
+20  
VGE  
Gate-Emitter Voltage  
V
IC@TC=25oC  
IC@TC=100oC  
ICM  
Collector Current  
40  
A
Collector Current  
20  
A
Pulsed Collector Current1  
Maximum Power Dissipation  
Storage Temperature Range  
Operating Junction Temperature Range  
160  
A
PD@TC=25oC  
125  
W
TSTG  
-55 to 150  
150  
TJ  
Notes:  
1.Pulse width limited by Max. junction temperature .  
Thermal Data  
Symbol  
Parameter  
Value  
1
Units  
/W  
/W  
Rthj-c  
Rthj-a  
Thermal Resistance Junction-Case  
Thermal Resistance Junction-Ambient  
40  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
IGES  
ICES  
Parameter  
Gate-to-Emitter Leakage Current  
Collector-Emitter Leakage Current  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Gate Threshold Voltage  
Total Gate Charge  
Test Conditions  
VGE=+20V, VCE=0V  
CE=600V, VGE=0V  
VGE=15V, IC=20A  
Min. Typ. Max. Units  
-
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
+100  
nA  
uA  
V
V
-
25  
VCE(sat)  
VCE(sat)  
VGE(th)  
Qg  
1.8  
2
2.5  
VGE=15V, IC=35A  
2.7  
V
VCE=VGE, IC=250uA  
-
6
V
IC=20A  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
mJ  
mJ  
pF  
pF  
pF  
100  
24  
40  
50  
20  
135  
190  
0.3  
0.9  
160  
VCE=480V  
Qge  
Gate-Emitter Charge  
-
VGE=15V  
Qgc  
Gate-Collector Charge  
Turn-on Delay Time  
-
VCE=480V,  
Ic=20A,  
VGE=15V,  
RG=5,  
td(on)  
tr  
td(off)  
tf  
-
Rise Time  
-
Turn-off Delay Time  
-
Fall Time  
380  
Inductive Load  
Eon  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Input Capacitance  
-
-
Eoff  
VGE=0V  
Cies  
Coes  
Cres  
3400 5440  
VCE=30V  
Output Capacitance  
75  
50  
-
-
Reverse Transfer Capacitance  
f=1.0MHz  
Data and specifications subject to change without notice  
1
201105102  

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