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AP15P10GH PDF预览

AP15P10GH

更新时间: 2024-11-20 08:31:43
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管
页数 文件大小 规格书
4页 75K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP15P10GH 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Is Samacsys:NBase Number Matches:1

AP15P10GH 数据手册

 浏览型号AP15P10GH的Datasheet PDF文件第2页浏览型号AP15P10GH的Datasheet PDF文件第3页浏览型号AP15P10GH的Datasheet PDF文件第4页 
AP15P10GH/J  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Lower On-resistance  
BVDSS  
RDS(ON)  
ID  
-100V  
210mΩ  
-16A  
Simple Drive Requirement  
Fast Switching Characteristic  
RoHS Compliant  
G
Description  
G
D
The TO-252 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as high efficiency switching DC/DC converters and  
DC motor control. The through-hole version (AP15P10GJ) is available  
for low-profile applications.  
S
TO-252(H)  
G
D
S
TO-251(J)  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-100  
Units  
VDS  
VGS  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
±20  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
-16  
A
-9.8  
A
64  
A
PD@TC=25℃  
Total Power Dissipation  
96  
W
Linear Derating Factor  
0.77  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
1.3  
Units  
/W  
/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
110  
Data and specifications subject to change without notice  
200810051-1/4  

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