Datasheet > AP15T25H-HF

AP15T25H-HF

更新时间： 2024-11-20 12:54:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	58K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP15T25H-HF 数据手册

AP15T25H-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

250V

320mΩ

8.7A

▼ Lower Gate Charge

▼ Fast Switching Characteristics

▼ RoHS Compliant & Halogen-Free

Description

AP15T25 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

TO-252(H)

The TO-252 package is widely preferred for all commercial-

industrial surface mount applications using infrared reflow technique

and suited for high current application due to the low connection

resistance.

Absolute Maximum Ratings

Symbol

Parameter

Rating

250

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

8.7

5.6

P_D@T_C=25℃

P_D@T_A=25℃

T_STG

Total Power Dissipation

62.5

℃

Total Power Dissipation³

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Rthj-a

62.5

Data & specifications subject to change without notice

201311181

12 3 4

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