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AP15P15GH-HF PDF预览

AP15P15GH-HF

更新时间: 2024-11-18 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
4页 100K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP15P15GH-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.69
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:140 V
最大漏极电流 (ID):15 A最大漏源导通电阻:0.18 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):60 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

AP15P15GH-HF 数据手册

 浏览型号AP15P15GH-HF的Datasheet PDF文件第2页浏览型号AP15P15GH-HF的Datasheet PDF文件第3页浏览型号AP15P15GH-HF的Datasheet PDF文件第4页 
AP15P15GH-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Lower Gate Charge  
BVDSS  
RDS(ON)  
ID  
-140V  
180mΩ  
-15A  
Simple Drive Requirement  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
G
D
S
TO-252(H)  
ruggedized device design, low on-resistance and cost-effectiveness.  
The TO-252 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-140  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
-15  
A
-9.7  
A
-60  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
89.2  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
1.4  
Rthj-a  
62.5  
Data and specifications subject to change without notice  
1
200909141  

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