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AP15P10GP_09 PDF预览

AP15P10GP_09

更新时间: 2024-01-01 07:14:19
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 105K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP15P10GP_09 数据手册

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AP15P10GS/P  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Low Gate Charge  
BVDSS  
RDS(ON)  
ID  
-100V  
230mΩ  
-15A  
Simple Drive Requirement  
Fast Switching Characteristic  
RoHS Compliant  
G
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
D
S
TO-263(S)  
TO-220(P)  
The TO-263 package is widely preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP15P10GP)  
are available for low-profile applications.  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-100  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
-15  
A
-9.4  
A
-60  
A
PD@TC=25℃  
Total Power Dissipation  
96  
W
Linear Derating Factor  
0.77  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
1.3  
40  
62  
Rthj-a  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient  
Data and specifications subject to change without notice  
1
200910083  

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