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AP15P15GH PDF预览

AP15P15GH

更新时间: 2024-09-28 17:15:15
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
5页 62K
描述
TO-252

AP15P15GH 数据手册

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AP15P15GH-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Lower Gate Charge  
BVDSS  
RDS(ON)  
ID  
-140V  
180mΩ  
-15A  
Simple Drive Requirement  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
G
D
S
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
TO-252(H)  
The TO-252 package is widely preferred for commercial-industrial  
surface mount applications and using infrared reflow technique and  
suited for high current application due to the low connection resistance.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
-140  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
-15  
A
-9.7  
A
-60  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
89.2  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
1.4  
Rthj-a  
62.5  
Data and specifications subject to change without notice  
1
201501122  

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