Datasheet > AP15TP1R0M

AP15TP1R0M

更新时间： 2024-05-23 22:21:59

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	72K
描述
SO-8

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中文翻译

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AP15TP1R0M 数据手册

AP15TP1R0M

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

-150V

1Ω

▼ Lower Gate Charge

▼ Fast Switching Characteristic

-1.1A

▼ RoHS Compliant & Halogen-Free

SO-8

Description

AP15TP1R0 series are from Advanced Power innovated

design and silicon process technology to achieve the lowest

possible on-resistance and fast switching performance. It

provides the designer with an extreme efficient device for use

in a wide range of power applications.

The SO-8 package is widely preferred for all commercial-

industrial surface mount applications using infrared reflow

technique and suited for voltage conversion or switch

applications.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

-150

Gate-Source Voltage

+25

Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

-1.1

-0.87

-4.4

P_D@T_A=25℃

T_STG

Total Power Dissipation³

2.5

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201510131

12 3 4 5 6

中文翻译

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