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AP15T20GH-HF PDF预览

AP15T20GH-HF

更新时间: 2024-09-27 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 63K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP15T20GH-HF 数据手册

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AP15T20GH-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
200V  
250mΩ  
10A  
D
S
Lower Gate Charge  
Fast Switching Characteristics  
RoHS Compliant & Halogen-Free  
G
Description  
G
D
S
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
TO-252(H)  
The TO-252 package is widely preferred for commercial-industrial  
surface mount applications and using infrared reflow technique and  
suited for high current application due to the low connection resistance.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
200  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
ID@TC=25  
ID@TC=100℃  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
10  
A
6.1  
A
26  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
62.5  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
2
Rthj-a  
62.5  
Data & specifications subject to change without notice  
1
201202291  

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