Datasheet > AOT1N60

AOT1N60

更新时间： 2024-09-27 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
5页	312K
描述
600V,1.3A N-Channel MOSFET

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AOT1N60 数据手册

AOT1N60

600V,1.3A N-Channel MOSFET

General Description

The AOT1N60 have been fabricated using an advanced

high voltage MOSFET process that is designed to deliver

high levels of performance and robustness in popular AC- DC applications.By providing low R_DS(on), C_issand C_rss

along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power

supply designs.

Features

V_DS

700V@150℃

1.3A

I_D(at V_GS=10V)

_DS(ON)(at V_GS=10V)

< 9Ω

Top View

TO-220

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

600

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±30

T_C=25°C

1.3

Continuous Drain

Current

I_D

T_C=100°C

0.9

Pulsed Drain Current ^C

I_DM

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

Single plused avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

V/ns

W/ ^oC

41.7

0.3

P_D

Power Dissipation ^B

Derate above 25^oC

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_J, T_STG

T_L

-55 to 150

°C

300

°C

Parameter

Symbol

R_θJA

Typical

Maximum

Units

°C/W

Maximum Junction-to-Ambient ^A,D

0.5

Maximum Case-to-sink ^A

R_θCS

Maximum Junction-to-Case

R_θJC

1/5

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