Datasheet > AOT20C60P

AOT20C60P

更新时间： 2024-02-29 23:29:49

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	452K
描述
High Current Capability

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AOT20C60P 数据手册

AOT20C60P/AOB20C60P

600V,20A N-Channel MOSFET

General Description

Product Summary

• Trench Power AlphaMOS-II technology

• Low R_DS(ON)

• Low Ciss and Crss

V_DS@ T_j,max

I_DM

700V

80A

R_DS(ON),max

Q_g,typ

_oss@ 400V

< 0.26Ω

52nC

8.2µJ

• High Current Capability

Applications

100% UIS Tested

100% R_gTested

• General Lighting for LED and CCFL

• AC/DC Power supplies for Industrial, Consumer, and

Telecom

TO-263

TO-220

D²PAK

AOT20C60P

AOB20B60P

Orderable Part Number

AOT20C60PL

Package Type

TO-220 Green

TO-263 Green

Form

Tube

Tape & Reel

Minimum Order Quantity

1000

800

AOB20C60PL

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

600

±30

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^CL=1mH

Repetitive avalanche energy ^C

I_D

T_C=100°C

I_DM

I_AR

E_AR

E_AS

200

Single pulsed avalanche energy ^G

MOSFET dv/dt ruggedness

Peak diode recovery dv/dt

T_C=25°C

1599

100

dv/dt

V/ns

W/°C

°C

463

3.7

P_D

Power Dissipation ^B

Derate above 25°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

T_L

300

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A,D

Maximum Case-to-sink ^A

Maximum Junction-to-Case

Symbol

R_θJA

Maximum

Units

°C/W

R_θCS

0.5

R_θJC

0.27

Rev.2.0: January 2015

www.aosmd.com

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