AOT25S65/AOB25S65/AOTF25S65
600V 20A
α
MOS TM Power Transistor
General Description
fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of
The AOT25S65 & AOB25S65 & AOTF25S65 have been
performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
Features
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
750V
104A
0.19Ω
26.4nC
5.8µC
Eoss @ 400V
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT25S65/AOB25S65
AOTF25S65
AOTF25S65L
Units
Drain-Source Voltage
VDS
650
V
Gate-Source Voltage
VGS
±30
25*
16*
104
7
V
A
TC=25°C
25
16
25*
16*
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current C
ID
TC=100°C
IDM
IAR
A
Repetitive avalanche energy C
Single pulsed avalanche energy G
TC=25°C
EAR
EAS
96
mJ
mJ
W
750
50
357
2.9
40
PD
Power Dissipation B
Derate above 25oC
0.4
100
0.3
W/ o
C
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
V/ns
°C
20
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
300
°C
Parameter
Symbol
AOT25S65/AOB25S65
AOTF25S65
AOTF25S65L
Units
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
65
65
65
°C/W
RθCS
RθJC
0.5
--
--
°C/W
°C/W
Maximum Junction-to-Case
0.35
2.5
3.1
* Drain current limited by maximum junction temperature.
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